Epitaxial, cation-ordered, ferroelectric PbSc0.5Ta 0.5O3 thin films prepared by pulsed laser deposition

Applied Physics Letters

Volumn 95, Issue 2, 2009, Pages

  Chopra, Anuj ^a   Birajdar, Balaji I ^a   Kim, Yunseok ^a   Vrejoiu, Ionela ^a   Alexe, Marin ^a   Hesse, Dietrich ^a  

^a MAX PLANCK INSTITUTE OF MICROSTRUCTURE PHYSICS   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BOTTOM ELECTRODES; CATION ORDERING; EPITAXIAL RELATIONSHIPS; FERROELECTRIC BEHAVIOR; FERROELECTRIC PROPERTY; IN-PLANE; OUT-OF-PLANE; ROOM TEMPERATURE; SINGLE PHASE; SRTIO; SUPERSTRUCTURE REFLECTIONS; SWITCHING CURRENTS; TEM;

ATOMIC FORCE MICROSCOPY; CRYSTAL MICROSTRUCTURE; CRYSTAL ORIENTATION; DEPOSITION; DIFFRACTION; ELECTRIC POTENTIAL; EPITAXIAL GROWTH; FERROELECTRIC FILMS; FERROELECTRICITY; HOLOGRAPHIC INTERFEROMETRY; MOLECULAR BEAM EPITAXY; POSITIVE IONS; PULSED LASER DEPOSITION; TANTALUM; TRANSMISSION ELECTRON MICROSCOPY;

EPITAXIAL FILMS;

EID: 67650730436     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3180812     Document Type: Article

References (23)

1. L. E. Cross, Ferroelectrics 0015-0193 76, 241 (1987).
2. S. E. Park and T. R. Shrout, Mater. Res. Innovations 1432-8917 1, 20 (1997). 10.1007/s100190050014
3. E. M. Sabolsky, A. R. James, S. Kwon, S. Trolier-Mckinstry, and G. L. Messing, Appl. Phys. Lett. 0003-6951 78, 2551 (2001). 10.1063/1.1367291
4. K. Uchino, S. Nomura, L. E. Cross, S. J. Jang, and R. E. Newnham, J. Appl. Phys. 0021-8979 51, 1142 (1980). 10.1063/1.327724
5. R. W. Whatmore, Ferroelectrics 0015-0193 118, 241 (1991).
6. N. M. Shorrocks, R. W. Whatmore, and P. C. Osbond, Ferroelectrics 0015-0193 106, 387 (1990).
7. C. A. Randall, D. J. Barber, R. W. Whatmore, and P. J. Groves, J. Mater. Sci. 0022-2461 21, 4456 (1986). 10.1007/BF01106571
8. P. Groves, J. Phys. C 0022-3719 18, L1073 (1985). 10.1088/0022-3719/18/ 34/002
9. S. Murakami, D. Popovici, K. Satoh, M. Matsumoto, M. Noda, and M. Okuyama, Sens. Mater. 0914-4935 16, 231 (2004).
10. A. Patel, N. M. Shorrocks, and R. W. Whatmore, Ferroelectrics 0015-0193 134, 343 (1992).
11. D. Liu and D. Payne, J. Appl. Phys. 0021-8979 77, 3361 (1995). 10.1063/1.358623
12. K. Brinkman, Y. Wang, M. Cantoni, D. Su, N. Setter, and P. K. Petrov, J. Mater. Res. 0884-2914 22, 217 (2007). 10.1557/jmr.2007.0023
13. C. J. Brierley, C. Trundle, L. Considine, R. W. Whatmore, and F. W. Ainger, Ferroelectrics 0015-0193 91, 181 (1989).
14. R. Watton and M. A. Todd, Ferroelectrics 0015-0193 118, 279 (1991).
15. S. H. Pyke, K. Z. Baba-Kishi, R. Watton, and M. A. Todd, Integr. Ferroelectr. 1058-4587 4, 25 (1994). 10.1080/10584589408018657
16. C. Bjormander, K. Sreenivas, A. M. Grishin, and K. V. Rao Appl, Appl. Phys. Lett. 67, 58 (1995). 10.1063/1.115492
17. K. Brinkman, Y. Wang, D. Su, A. Tagantsev, P. Muralt, and N. Setter, J. Appl. Phys. 0021-8979 102, 044110 (2007). 10.1063/1.2770834
18. H. C. Wang and W. A. Schulze, J. Am. Ceram. Soc. 0002-7820 73, 1228 (1990). 10.1111/j.1151-2916.1990.tb05184.x
19. G. Koster, B. L. Kropman, G. J. H. M. Rijnders, D. H. A. Blank, and H. Rogalla, Appl. Phys. Lett. 0003-6951 73, 2920 (1998). 10.1063/1.122630
20. W. Hong, H. N. Lee, M. Yoon, H. M. Christen, D. H. Lowndes, Z. Suo, and Z. Zhang, Phys. Rev. Lett. 0031-9007 95, 095501 (2005). 10.1103/PhysRevLett.95. 095501
21. J. W. Matthews, Epitaxial Growth, Part B (Academic, New York, 1975).
22. L. Pintilie, I. Vrejoiu, D. Hesse, G. LeRhun, and M. Alexe, Phys. Rev. B 0163-1829 75, 224113 (2007). 10.1103/PhysRevB.75.224113
23. M. Tyunina and J. Levoska, Appl. Phys. Lett. 0003-6951 88, 262904 (2006). 10.1063/1.2218321