MESFETs on H-terminated polycrystalline diamond

Proceedings of the 10th International Conference on ULtimate Integration of Silicon, ULIS 2009

Volumn , Issue , 2009, Pages 257-260

  Calvani, P ^a   Sinisi, F ^a   Rossi, M C ^a   Conte, G ^a   Giovine, E ^b   Ciccognani, W ^c   Limiti, E ^c  

^a ROMA TRE UNIVERSITY   (Italy)

^b IFN CNR   (Italy)

^c UNIVERSITY OF ROME TOR VERGATA   (Italy)

Author keywords

Carbon based electronics; Device technology; Diamond; Electrical characteristics; Semiconductor devices; Wide band semiconductors

Indexed keywords

ACTIVE REGIONS; CARBON BASED ELECTRONICS; DEVICE TECHNOLOGY; DRAIN-SOURCE CURRENTS; ELECTRICAL CHARACTERISTICS; GATE LENGTH; HIGH FREQUENCY POWER; MAXIMUM OSCILLATION FREQUENCY; MESFETS; MICROELECTRONIC TECHNOLOGIES; MICROWAVE OPERATIONS; POLYCRYSTALLINE DIAMONDS; SATELLITE COMMUNICATIONS; SEMICONDUCTOR FIELD-EFFECT TRANSISTORS; VACUUM ELECTRONICS; WIDE BAND SEMICONDUCTORS;

AMPLIFICATION; DIAMONDS; DRAIN CURRENT; FABRICATION; MESFET DEVICES; MICROWAVE INTEGRATED CIRCUITS; MICROWAVES; SATELLITE COMMUNICATION SYSTEMS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR SWITCHES; VACUUM TECHNOLOGY;

FIELD EFFECT TRANSISTORS;

EID: 67650678697     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ULIS.2009.4897585     Document Type: Conference Paper

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