Impact-ionization in silicon at large operating temperature

International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

Volumn , Issue , 1999, Pages 27-30

  Valdinoci, M ^a   Ventura, D ^a   Vecchi, M C ^a   Rudan, M ^a   Baccarani, G ^a   Illien, F ^a   Stricker, A ^a   Zullino, L ^a  

^a UNIVERSITY OF BOLOGNA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; ELECTRIC BREAKDOWN OF SOLIDS; ELECTRON TRANSITIONS; IONIZATION OF SOLIDS; SEMICONDUCTOR DIODES; SEMICONDUCTOR JUNCTIONS;

BOLTZMANN EQUATIONS; IMPACT-IONIZATION COEFFICIENTS;

SEMICONDUCTING SILICON;

EID: 0033285112     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (10)