Role of the electronic structure on the relationship between the crystallinity of CoFe and its tunneling magnetoresistance

Applied Physics Letters

Volumn 95, Issue 1, 2009, Pages

  Gao, Li ^a,b   Jiang, Xin ^a   Nicholson, D M C ^c   Topuria, Teya ^a   Parkin, Stuart S P ^a  

^a IBM ALMADEN RESEARCH CENTER   (United States)

^b STANFORD UNIVERSITY   (United States)

^c OAK RIDGE NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AB-INITIO ELECTRONIC STRUCTURE CALCULATIONS; AMORPHOUS PHASE; COFE ALLOYS; CRYSTALLINITY; FERMI ENERGY; MAGNETIC TUNNEL JUNCTION; TUNNEL BARRIER; TUNNELING MAGNETORESISTANCE;

ALUMINUM; AMORPHOUS ALLOYS; CRYSTALLINE MATERIALS; ELECTRIC RESISTANCE; ELECTRONIC PROPERTIES; ELECTRONIC STRUCTURE; MAGNETIC FIELD EFFECTS; MAGNETOELECTRONICS; MAGNETORESISTANCE; PHASE INTERFACES; SEMICONDUCTOR JUNCTIONS; SPIN DYNAMICS; TUNNELING (EXCAVATION); TUNNELS; WIND TUNNELS;

TUNNEL JUNCTIONS;

EID: 67650507571     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3132084     Document Type: Article

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