Effect of transition element substitution on thermoelectric properties of semiconductor clathrate compounds

International Conference on Thermoelectrics, ICT, Proceedings

Volumn 2003-January, Issue , 2003, Pages 121-126

  Anno, H ^a   Hokazono, M ^a   Kawamura, M ^a   Matsubara, K ^a  

^a TOKYO UNIVERSITY OF SCIENCE   (Japan)

Author keywords

Conducting materials; Crystalline materials; Doping; Electron mobility; Glass; Phonons; Platinum; Semiconductor materials; Thermal conductivity; Thermoelectricity

Indexed keywords

CRYSTALLINE MATERIALS; DOPING (ADDITIVES); ELECTRON MOBILITY; ELECTRONIC PROPERTIES; GLASS; MOLECULAR SIEVES; PHONONS; PLATINUM; SEMICONDUCTOR DOPING; SEMICONDUCTOR MATERIALS; THERMAL CONDUCTIVITY; THERMOELECTRIC EQUIPMENT; THERMOELECTRICITY; TRANSITION METALS;

CLATHRATE COMPOUND; CONDUCTING MATERIALS; ELECTRON CRYSTALS; LOW THERMAL CONDUCTIVITY; THERMO-ELECTRIC MATERIALS; THERMOELECTRIC PERFORMANCE; THERMOELECTRIC PROPERTIES; TRANSITION ELEMENT;

HYDRATES;

EID: 84946018201     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ICT.2003.1287464     Document Type: Conference Paper

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