The dependence of oxygen vacancy distributions in BiFeO3 films on oxygen pressure and substrate

Applied Physics Letters

Volumn 95, Issue 1, 2009, Pages

  Yuan, G L ^a   Martin, L W ^b   Ramesh, R ^b,c   Uedono, A ^a  

^a UNIVERSITY OF TSUKUBA   (Japan)

^b LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

^c UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DEPTH DISTRIBUTION; EPITAXIAL STRAIN; FILM INTERFACES; FILM SURFACES; OXYGEN PRESSURE; OXYGEN-VACANCY DISTRIBUTION; SRTIO;

COOLING; OXYGEN; SEMICONDUCTING BISMUTH COMPOUNDS; STRONTIUM ALLOYS; SUBSTRATES; VACANCIES;

OXYGEN VACANCIES;

EID: 67650474676     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3171939     Document Type: Article

References (18)

1. T. Choi, S. Lee, Y. J. Choi, V. Kiryukhin, and S. -W. Cheong, Science 0036-8075 324, 63 (2009). 10.1126/science.1168636
2. G. W. Pabst, L. W. Martin, Y. H. Chu, and R. Ramesh, Appl. Phys. Lett. 0003-6951 90, 072902 (2007). 10.1063/1.2535663
3. S. R. Basu, L. W. Martin, Y. H. Chu, M. Gajek, R. Ramesh, R. C. Rai, X. Xu, and J. L. Musfeldt, Appl. Phys. Lett. 0003-6951 92, 091905 (2008). 10.1063/1.2887908
4. A. Kalabukhov, R. Gunnarsson, J. Borjesson, E. Olsson, T. Claeson, and D. Winkler, Phys. Rev. B 0163-1829 75, 121404 (R) (2007). 10.1103/PhysRevB.75. 121404
5. D. D. Cuong, B. Lee, K. M. Choi, H. S. Ahn, S. Han, and J. Lee, Phys. Rev. Lett. 0031-9007 98, 115503 (2007). 10.1103/PhysRevLett.98.115503
6. F. Cordero, Phys. Rev. B 0163-1829 76, 172106 (2007). 10.1103/PhysRevB.76.172106
7. C. Ederer and N. A. Spaldin, Phys. Rev. B 0163-1829 71, 224103 (2005). 10.1103/PhysRevB.71.224103
8. D. J. Keeble, B. Nielsen, A. Krishnan, K. G. Lynn, S. Madhukar, R. Ramesh, and C. F. Yong, Appl. Phys. Lett. 0003-6951 73, 318 (1998). 10.1063/1.121820
9. A. Uedono, K. Shimayama, M. Kiyohara, Z. Q. Chen, and K. Yamabe, J. Appl. Phys. 92, 2697 (2002). 10.1063/1.1498889
10. A. Uedono, Z. Q. Chen, K. Yamabe, T. Ohdaira, R. Suzuki, and T. J. Mikado, J. Appl. Phys. 0021-8979 91, 5307 (2002). 10.1063/1.1462852
11. S. McGuire, D. J. Keeble, R. E. Mason, P. G. Coleman, Y. Koutsonas, and T. J. Jackson, J. Appl. Phys. 0021-8979 100, 044109 (2006). 10.1063/1.2245214
12. A. van Veen, H. Schut, M. Clement, J. M. M. de Nijs, A. Kruseman, and M. R. Ijpma, Appl. Surf. Sci. 0169-4332 85, 216 (1995). 10.1016/0169-4332(94)00334- 3
13. Y. H. Chu, Y. -H. Chu, Q. Zhan, L. W. Martin, M. P. Cruz, P. L. Yang, G. W. Pabst, F. Zavaliche, S. Y. Yang, J. X. Zhang, L. Q. Chen, D. G. Schlom, I. N. Lin, T. B. Wu, and R. Ramesh, Adv. Mater. 0935-9648 18, 2307 (2006). 10.1002/adma.200601098
14. J. Wang, J. B. Neaton, H. Zheng, V. Nagarajan, S. B. Ogale, B. Liu, D. Viehland, V. Vaithyanathan, D. G. Schlom, U. V. Waghmare, N. A. Spaldin, K. M. Rabe, M. Wuttig, and R. Ramesh, Science 0036-8075 299, 1719 (2003). 10.1126/science.1080615
15. T. Zhao, A. Scholl, F. Zavliche, K. Lee, M. Barry, A. Doran, M. P. Cruz, Y. H. Chu, C. Ederer, N. A. Spaldin, R. R. Das, D. M. Kim, S. H. Baek, C. B. Eom, and R. Ramesh, Nature Mater. 1476-1122 5, 823 (2006). 10.1038/nmat1731
16. A. Fossdal, M. Menon, I. Waernhus, K. Wiik, M. A. Einarsrud, and T. Grande, J. Am. Ceram. Soc. 0002-7820 87, 1952 (2004).
17. T. Uozumi, K. Shibuya, T. Ohnishi, T. Sato, and M. Lippmaa, Jpn. J. Appl. Phys., Part 2 0021-4922 45, L830 (2006). 10.1143/JJAP.45.L830
18. R. Poyato, M. L. Calzada, and L. Pardo, Appl. Phys. Lett. 0003-6951 86, 042905 (2005). 10.1063/1.1853506