Low pressure chemical vapor deposition of niobium coating on silicon carbide

Applied Surface Science

Volumn 255, Issue 20, 2009, Pages 8611-8615

  Liu, Qiaomu ^a   Zhang, Litong ^a   Cheng, Laifei ^a   Liu, Jinling ^a   Wang, Yiguang ^a  

^a NORTHWESTERN POLYTECHNICAL UNIVERSITY   (China)

Author keywords

Chemical vapor deposition; Growth mechanism; Growth rate; Niobium; Thermodynamic calculation

Indexed keywords

ACTIVATION ENERGY; CHEMICAL VAPOR DEPOSITION; CHLORINE COMPOUNDS; COATINGS; DEPOSITION RATES; ENERGY DISPERSIVE SPECTROSCOPY; GROWTH RATE; LOW PRESSURE CHEMICAL VAPOR DEPOSITION; NIOBIUM; SCANNING ELECTRON MICROSCOPY; SILICON CARBIDE; X RAY DIFFRACTION;

CHEMICAL VAPOR DEPOSITED; DEPOSITED COATINGS; EFFECT OF TEMPERATURE; GROWTH MECHANISMS; MASS-TRANSPORT PROCESS; NIOBIUM COATINGS; SURFACE KINETICS; THERMODYNAMIC CALCULATIONS;

NIOBIUM COMPOUNDS;

EID: 67650451529     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2009.06.037     Document Type: Article

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