Quantum compact model for ballistic double gate MOSFETs

Proceedings of the DTIS'09 - 2009 4th IEEE International Conference on Design and Technology of Integrated Systems in Nanoscale Era

Volumn , Issue , 2009, Pages 144-146

  El Sabbagh, M ^a   Fikry, W ^a   Omar, O A ^a  

^a The British University in Egypt   (Egypt)

Author keywords

Ballistic current; DIBL; Double gate MOSFETs; Quantum mechanical effects

Indexed keywords

BALLISTIC CURRENT; BALLISTIC DOUBLE-GATE MOSFETS; COMPACT MODEL; DIBL; DOUBLE GATE; DOUBLE GATE MOSFETS; DRAIN-INDUCED BARRIER LOWERING; INJECTION VELOCITY; LINEAR REGION; NANO-MOSFETS; NUMERICAL SIMULATION; QUANTUM MECHANICAL EFFECTS; SATURATION REGION;

INTEGRATED CONTROL; MOSFET DEVICES; NANOSTRUCTURED MATERIALS;

BALLISTICS;

EID: 67650413674     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/DTIS.2009.4938043     Document Type: Conference Paper

References (10)

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