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Journal of Applied Physics

Volumn 105, Issue 12, 2009, Pages

A theory for the high-field current-carrying capacity of one-dimensional semiconductors

(1) Jena, Debdeep a

a University of Notre Dame (United States)

Author keywords

[No Author keywords available]

Indexed keywords

1D STRUCTURES; ANALYTICAL RESULTS; BAND EDGE; BAND GAPS; CARRIER DENSITY; CRITICAL VALUE; CURRENT SATURATION; DIFFUSIVE TRANSPORT; GRAPHENE NANORIBBONS; HIGH ELECTRIC FIELDS; HIGH FIELD; HIGH FIELD TRANSPORT; METALLIC NANOTUBES; OPTICAL PHONON ENERGIES; OPTICAL PHONON INTERACTION; SATURATION CURRENT; SATURATION VELOCITY; SEMICONDUCTING CARBON NANOTUBES; SEMICONDUCTING TUBES; SEMICONDUCTOR NANOWIRE; ULTRA-FAST; VAN HOVE SINGULARITIES;

CARRIER CONCENTRATION; ELECTRIC FIELDS; ELECTRIC WIRE; ENERGY GAP; PHONONS;

CARBON NANOTUBES;

EID: 67650224401 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3147877 Document Type: Conference Paper

Times cited : (14)

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