Solvothermal growth of highly oriented wurtzite-structured ZnO nanotube arrays on zinc foil

Crystal Research and Technology

Volumn 44, Issue 6, 2009, Pages 619-623

  Yang, J H ^a   Zheng, J H ^a   Zhai, H J ^a   Yang, L L ^a   Liu, L ^a   Gao, M ^a  

^a JILIN NORMAL UNIVERSITY   (China)

Author keywords

Photoluminescence; Solvothermal growth; ZnO nanotube

Indexed keywords

DEEP LEVEL; DIRECT GROWTH; SCANNING ELECTRON MICROSCOPES; SINGLE-CRYSTALLINE; SOLVOTHERMAL APPROACH; SOLVOTHERMAL GROWTH; UV EMISSIONS; WURTZITE; WURTZITE STRUCTURE; ZINC IONS; ZNO NANOROD ARRAYS; ZNO NANOTUBE;

CARBON NANOTUBES; EMISSION SPECTROSCOPY; ION SOURCES; NANORODS; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; SCANNING ELECTRON MICROSCOPY; SUBSTRATES; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS; ZINC; ZINC OXIDE; ZINC SULFIDE;

SEMICONDUCTING ZINC COMPOUNDS;

EID: 67649771222     PISSN: 02321300     EISSN: 15214079     Source Type: Journal    
DOI: 10.1002/crat.200800633     Document Type: Article

References (28)

1. Z. L. Wang and J. H. Song, Science 312, 242 (2006).
2. R. F. Service, Science 276, 895 (1997).
3. R. Katoh, A. Furube, K. Hara, S. Murata, H. Sugihara, H. Arakawa, and M. Tachiya, J. Phys. Chem. B 106, 12957 (2002).
4. S. C. Minne, S. R. Manalis, and C. F. Quate, Appl. Phys. Lett. 67, 3918 (1995).
5. J. L. Yang, S. J. An, W. I. Park, G. C. Yi, and W. Y. Choi, Adv. Mater. 16, 1661 (2004).
6. L. Vayssieres, K. Keis, A. Hagfeldt, and S. E. Lindquist, Chem. Mater. 13, 4395 (2001).
7. H. D. Yu, Z. P. Zhang, M. Y. Han, X. T. Hao, and F. F. Zhu, J. Am. Chem. Soc. 127, 2378 (2005).
8. Q. C. Li, V. Kumar, Y. Li, H. T. Zhang, T. J. Marks, and R. P. H. Chang, Chem. Mater. 17, 1001 (2005).
9. Z. Wang and H. L. Li, Appl. Phys. A 74, 201 (2002).
10. M. Lai and D. Riley, J. Chem. Mater. 18, 2233 (2006).
11. X. H. Kong, X. M. Sun, X. L. Li, and Y. D Li, Mater. Chem. Phys. 82, 997 (2003).
12. H. W. Liang, Y. M. Lu, D. Z. Shen, B. H. Li, Z. Z. Zhang, C. X. Shan, J. Y. Zhang, X. W. Fan, and G. T. Du, Solid State Commun. 137, 182 (2006).
13. B. P. Zhang, N. T. Binh, K. Wakatsuki, Y. Segawa, Y. Yamada, N. Usami, M. Kawasaki, and H. Koinuma, Appl. Phys. Lett. 84, 4098 (2004).
14. X. H. Kong, X. M. Sun, X. L. Li, and Y. D. Li, Mater. Chem. Phys. 82, 997 (2003).
15. Y. Sun, G. M. Fuge, N. A. Fox, D. J. Riley, and M. N. R. Ashfold, Adv. Mater. 17, 2477 (2005).
16. Y. Sun, D. J. Riley, and M. N. R. Ashfold, J. Phys. Chem. B 110, 15186 (2006).
17. T. M. Williams, D. Hunter, A. K. Pradhan, and I. V. Kityk, Appl. Phys. Lett. 89, 043116 (2006).
18. S. Kar, A. Dev, and S. Chaudhuri, J. Phys. Chem. B 110, 17848 (2006).
19. A. Dev, S. Kar, S. Chakrabarti, and S. Chaudhuri, Nanotechnol. 17, 1533 (2006).
20. F. Li, Y. Ding, P. X. X. Gao, X. Q. Xin, and Z. L. Wang, Angew. Chem. Int. Ed. 43, 5238 (2004).
21. S. Kar and S. Santra, J. Phys. Chem. C 112, 8144 (2008).
22. N. E. Hsu, W. K. Hung, and Y. F. Chen, J. Appl. Phys. 96, 4671 (2004).
23. D. Li, Y. H. Leung, A. B. Djurisic, Z. T. Liu, M. H. Xie, S. L. Shi, S. J. Xu, and W. K. Chan, Appl. Phys. Lett. 85, 1601 (2004).
24. I. Shalish, T. H. Emkin, and V. Narayanamurti, Phys. Rev. B 69, 245401 (2004).
25. K. Vanheusden, W. L. Warren, C. H. Seager, D. R. Tallant, J. A. Voigt, and B. E. Gnade, J. Appl. Phys. 79, 7983 (1996).
26. F. Decremps, J. P. Porres, A. M. Saitta, J. C. Chervin, and A. Polian, Phys. Rev. B 65, 092101 (2002).
27. A. K. Pradhan, K. Zhang, G. B. Loutts, U. N. Roy, Y. Cui, and A. Burger, J. Phys.: Cond. Matter 16, 7123 (2004).
28. Y. H. Tong, Y. C. Liu, C. H. Shao, Y. X. Liu, C. S. Xu, J. Y. Zhang, Y. M. Lu, D. Z. Shen, and X. W. Fan, J. Phys. Chem. B 110, 14714 (2006).