Reliable 2.3-μm wavelength highly strained InAs-InP MQW-DFB lasers with p-/n-InP buried heterostructure

IEEE Photonics Technology Letters

Volumn 21, Issue 13, 2009, Pages 896-898

  Takeshita, Tatsuya ^a   Sato, Tomonari ^a   Mitsuhara, Manabu ^a   Kondo, Yasuhiro ^a   Oohashi, Hiromi ^a  

^a NTT CORPORATION   (Japan)

Author keywords

Aging; Distributed feedback (DFB) lasers; Laser reliability; Quantum well lasers; Strain

Indexed keywords

AGING; AMBIENT TEMPERATURES; BURIED HETEROSTRUCTURE; CONSTANT OUTPUT POWER; DEGRADATION MECHANISM; DFB LASER; DIFFUSION PROCESS; DISTRIBUTED-FEEDBACK (DFB) LASERS; HIGHLY STRAINED; INAS; INAS QUANTUM WELL; INP; LASER RELIABILITY; MULTIQUANTUM WELLS; OPERATING CURRENTS; SQUARE ROOTS; TELECOMMUNICATION LASERS; TRACE GAS MONITORING;

DEGRADATION; DISTRIBUTED FEEDBACK LASERS; INDIUM ARSENIDE; SEMICONDUCTING INDIUM; SEMICONDUCTOR QUANTUM WELLS;

QUANTUM WELL LASERS;

EID: 67649595569     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2009.2020059     Document Type: Article

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