A comparison of diamond growth rate using in-liquid and conventional plasma chemical vapor deposition methods

Journal of Applied Physics

Volumn 105, Issue 11, 2009, Pages

  Takahashi, Yoshiyuki ^a   Toyota, Hiromichi ^a   Nomura, Shinfuku ^a   Mukasa, Shinobu ^a   Inoue, Toru ^a  

^a EHIME UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COOLING EFFECTS; DIAMOND GROWTH; EXPERIMENTAL SYSTEM; GAS-PHASE DEPOSITION; GASPHASE; HIGH-SPEED; INPUT POWER; LIQUID DEPOSITION; METHANOL SOLUTION; MICROWAVE ENERGIES; MICROWAVE PLASMA CHEMICAL VAPOR DEPOSITIONS; MIXED GAS; PER UNIT VOLUME; PLASMA CHEMICAL VAPOR DEPOSITION; PRESSURE CONDITIONS; PRESSURE INCREASE; SOURCE GAS;

CARBON NANOTUBES; CHEMICAL VAPOR DEPOSITION; DEPOSITION; DIAMONDS; DOSIMETRY; ETHANOL; HYDROGEN; LIQUID METHANE; LIQUIDS; METHANE; METHANOL; MICROWAVES; PLASMAS; PRESSURE EFFECTS; VAPORS;

PLASMA DEPOSITION;

EID: 67649510684     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3117198     Document Type: Article

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