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Volumn 605, Issue 3, 2009, Pages 353-358
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Influence of crystal-orientation effects on pulse-shape-based identification of heavy-ions stopped in silicon detectors
a,b a,b b a,b a,b c,d e f d c g,h i g,h g,h f d g,h i j e more.. |
Author keywords
Crystal orientation effects; Digital sampling; Pulse Shape Analysis; Solid state detectors
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Indexed keywords
HEAVY IONS;
SILICON DETECTORS;
CHARGE SIGNALS;
CRYSTAL AXES;
DIGITAL SAMPLING;
ION IMPINGING;
NORMAL INCIDENCE;
OPTIMAL VALUES;
PULSE SHAPE ANALYSIS;
SOLID STATE DETECTORS;
CRYSTAL ORIENTATION;
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EID: 67649401777
PISSN: 01689002
EISSN: None
Source Type: Journal
DOI: 10.1016/j.nima.2009.03.247 Document Type: Article |
Times cited : (39)
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References (18)
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