ZnO thin films implanted with al, sb and p: Optical, structural and electrical characterization

Journal of Nanoscience and Nanotechnology

Volumn 9, Issue 6, 2009, Pages 3574-3577

  Viseu, T ^a   De Campos, J Ayres ^a   Rolo, A G ^a   De Lacerda Aroso, T ^a   Cerqueira, M F ^a   Alves, E ^b  

^a UNIVERSITY OF MINHO   (Portugal)

^b INSTITUTO TECNOLÓGICO E NUCLEAR   (Portugal)

Author keywords

Ion implantation; Optical properties; Raman; X ray; ZnO

Indexed keywords

ANNEALING CONDITION; ANNEALING TEMPERATURES; CONDUCTIVITY MEASUREMENTS; DOPED FILMS; ELECTRICAL CHARACTERIZATION; ELECTRICAL CONDUCTIVITY; OPTICAL AND ELECTRICAL PROPERTIES; POLYCRYSTALLINE; PREFERRED ORIENTATIONS; R.F. MAGNETRON SPUTTERING; RAMAN; SB-DOPED; SCATTERING PATTERN; STRUCTURE AND PROPERTIES; ZNO; ZNO THIN FILM;

ALUMINUM; ANNEALING; DIFFRACTION; ELECTRIC CONDUCTIVITY; ION BOMBARDMENT; ION IMPLANTATION; METALLIC FILMS; OPTICAL FILMS; OPTICAL PROPERTIES; PHOSPHORUS; RAMAN SCATTERING; SEMICONDUCTING ZINC COMPOUNDS; SPECTRUM ANALYSIS; THIN FILMS; X RAY DIFFRACTION; X RAYS; ZINC OXIDE;

X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 67649222066     PISSN: 15334880     EISSN: None     Source Type: Journal    
DOI: 10.1166/jnn.2009.NS32     Document Type: Conference Paper

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