Effects of mg content on znl-xmgxo:al transparent conducting films

Materials Research Society Symposium Proceedings

Volumn 1101, Issue , 2008, Pages 188-193

  Li, Xiaonan ^a   Ray, Hannah ^a   Perkins, Craig L ^a   Noufi, Rommel ^a  

^a NATIONAL RENEWABLE ENERGY LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AL FILMS; BAND GAP WIDTH; CDS LAYER; CIGS SOLAR CELLS; CONDUCTION BAND OFFSET; COPPER INDIUM GALLIUM DISELENIDE; COSPUTTERING; GLASS SUBSTRATES; INDIUM TIN OXIDE; MG CONTENT; OPTICAL AND ELECTRICAL PROPERTIES; PHOTOVOLTAIC SOLAR CELLS; TRANSPARENT CONDUCTING FILMS; TRANSPARENT ELECTRODE; ZNO;

ALUMINUM; CADMIUM COMPOUNDS; CARRIER CONCENTRATION; CARRIER MOBILITY; ELECTRIC PROPERTIES; ELECTRIC RESISTANCE; ENERGY GAP; GALLIUM; INDIUM; METALLIC FILMS; OPTICAL BAND GAPS; OPTICAL PROPERTIES; OXIDE FILMS; PHOTOVOLTAIC CELLS; SELENIUM COMPOUNDS; SEMICONDUCTING CADMIUM COMPOUNDS; SEMICONDUCTING ZINC COMPOUNDS; SOLAR CELLS; SOLAR POWER GENERATION; TIN; ZINC; ZINC OXIDE;

CONDUCTIVE FILMS;

EID: 67649206335     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (11)

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