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Volumn 23, Issue 6, 2000, Pages 217-218,-220

Improving IC yield with protective ceramics

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS MATERIALS; ANODIC OXIDATION; CERAMIC COATINGS; CHEMICAL VAPOR DEPOSITION; ELECTRIC INSULATING COATINGS; ION IMPLANTATION; OXIDES; PLASMA APPLICATIONS; POLYCRYSTALLINE MATERIALS; PROTECTIVE COATINGS; SPUTTERING; THERMOOXIDATION;

EID: 6744268054     PISSN: 01633767     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article
Times cited : (4)

References (8)
  • 2
    • 6744271667 scopus 로고    scopus 로고
    • U.S Patent 5,838,530, Nov. 17, 1998
    • Zhang, "Applications of Protective Ceramics," U.S Patent 5,838,530, Nov. 17, 1998. The protective ceramics disclosed herein are a preferred embodiment of the above patent. It cannot be construed as a limitation to the scope of said patent. More information on the protective ceramics is available at http://sites.netscape.net/zhangpatents.
    • Applications of Protective Ceramics
    • Zhang1
  • 4
    • 24644456670 scopus 로고
    • 2 from High Resolution Transmission Electron Microscopy
    • Dec.
    • 2 from High Resolution Transmission Electron Microscopy," Journal of Electrochemical Society, Vol. 127, No, 12, pp. 2722-2728, Dec. 1980.
    • (1980) Journal of Electrochemical Society , vol.127 , Issue.12 , pp. 2722-2728
    • Gibson1
  • 5
    • 0040153517 scopus 로고    scopus 로고
    • Plasma Oxidation of Cu, Ti and Ni and Photoelectrochemical Properties of the Oxide Layers Formed
    • Masui et al, "Plasma Oxidation of Cu, Ti and Ni and Photoelectrochemical Properties of the Oxide Layers Formed," Materials Chemistry and Physics, Vol. 43, No. 3, pp 283-6, 1996.
    • (1996) Materials Chemistry and Physics , vol.43 , Issue.3 , pp. 283-286
    • Masui1
  • 6
    • 0019875804 scopus 로고
    • 3 Insulating Layers
    • 3 Insulating Layers," Thin Solid Films, Vol. 75, pp. 177-180, 1981.
    • (1981) Thin Solid Films , vol.75 , pp. 177-180
    • Schabowska1
  • 7
    • 0032276829 scopus 로고    scopus 로고
    • Sub-5nm Multiple-Thickness Gate Oxide Technology Using Oxygen Implantation
    • Dec.
    • King et al, "Sub-5nm Multiple-Thickness Gate Oxide Technology Using Oxygen Implantation," Technical Digest of 1998 International Electron Device Meeting, pp. 585-588, Dec. 1998.
    • (1998) Technical Digest of 1998 International Electron Device Meeting , pp. 585-588
    • King1
  • 8
    • 0028484636 scopus 로고
    • Metal-to-Metal Antifuses with Very Thin Silicon Dioxide Films
    • Aug.
    • Zhang et al, "Metal-to-Metal Antifuses with Very Thin Silicon Dioxide Films," IEEE Electron Device Letters, Vol. 15, No. 8, pp. 310-2, Aug. 1994.
    • (1994) IEEE Electron Device Letters , vol.15 , Issue.8 , pp. 310-312
    • Zhang1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.