Analytical technique compares dopants in fab air and on wafers

Semiconductor International

Volumn 23, Issue 3, 2000, Pages

  Wang, Jiansheng ^a,b,c   Balazs, Marjorie K ^a,d  

^a Balazs Analytical Services   (United States)

^b SRI INTERNATIONAL   (United States)

^c UNIVERSITY OF SAN FRANCISCO   (United States)

^d MIDWEST RESEARCH INSTITUTE   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AIR MONITORING; DOPANTS; METHOD DETECTION LIMIT; TRIETHYL PHOSPHATE;

CLEAN ROOMS; CONTAMINATION; GAS CHROMATOGRAPHY; PHOSPHORUS; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING BORON; SEMICONDUCTOR DOPING; SILICON WAFERS; THIN FILM TRANSISTORS;

INTEGRATED CIRCUIT MANUFACTURE;

EID: 6744245561     PISSN: 01633767     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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