메뉴 건너뛰기




Volumn 49, Issue C, 1997, Pages 37-76

Chapter 2 Band Gaps and Light Emission in Si/SiGe Atomic Layer Structures

Author keywords

[No Author keywords available]

Indexed keywords

ENERGY GAP;

EID: 67349285423     PISSN: 00808784     EISSN: None     Source Type: Book Series    
DOI: 10.1016/S0080-8784(08)62500-4     Document Type: Article
Times cited : (9)

References (109)
  • 5
    • 36448998842 scopus 로고
    • Photoluminescence and electroluminescence of SiGe dot fabricated by island growth
    • Apetz R., Vescan L., Hartmann A., Dieker C., and Lüth H. Photoluminescence and electroluminescence of SiGe dot fabricated by island growth. Appl. Phys. Lett. 66 (1995) 445-447
    • (1995) Appl. Phys. Lett. , vol.66 , pp. 445-447
    • Apetz, R.1    Vescan, L.2    Hartmann, A.3    Dieker, C.4    Lüth, H.5
  • 6
    • 36049057825 scopus 로고
    • Influence of Uniaxial Stress on the Indirect Absorption Edge in Si and Ge
    • Balslev I. Influence of Uniaxial Stress on the Indirect Absorption Edge in Si and Ge. Phys. Rev. 143 (1966) 636-647
    • (1966) Phys. Rev. , vol.143 , pp. 636-647
    • Balslev, I.1
  • 10
    • 36149024990 scopus 로고
    • Intrinsic optical absorption in Ge-Si alloys
    • Braunstein R., Moore A.R., and Herman F. Intrinsic optical absorption in Ge-Si alloys. Phys. Rev. 109 (1958) 695-710
    • (1958) Phys. Rev. , vol.109 , pp. 695-710
    • Braunstein, R.1    Moore, A.R.2    Herman, F.3
  • 11
    • 0005852321 scopus 로고
    • Valence band structure of Ge-Si Alloys
    • Braunstein R. Valence band structure of Ge-Si Alloys. Phys. Rev. 130 (1963) 869-879
    • (1963) Phys. Rev. , vol.130 , pp. 869-879
    • Braunstein, R.1
  • 12
    • 11644285740 scopus 로고
    • New optical transitions in Si-Ge strained superlattices
    • Brey L., and Tejedor C. New optical transitions in Si-Ge strained superlattices. Phys. Rev. Lett. 59 (1987) 1022-1025
    • (1987) Phys. Rev. Lett. , vol.59 , pp. 1022-1025
    • Brey, L.1    Tejedor, C.2
  • 18
    • 0001048516 scopus 로고
    • Valence-band offset at strained Si/Ge-interfaces
    • Colombo L., Resta R., and Baroni S. Valence-band offset at strained Si/Ge-interfaces. Phys. Rev. B 44 (1991) 5572-5579
    • (1991) Phys. Rev. B , vol.44 , pp. 5572-5579
    • Colombo, L.1    Resta, R.2    Baroni, S.3
  • 19
    • 36049059833 scopus 로고
    • New radiative recombination processes involving neutral donors and acceptors in Si and Ge
    • Dean P.J., Haynes J.R., and Flood W.F. New radiative recombination processes involving neutral donors and acceptors in Si and Ge. Phys. Rev. 161 (1967) 711-729
    • (1967) Phys. Rev. , vol.161 , pp. 711-729
    • Dean, P.J.1    Haynes, J.R.2    Flood, W.F.3
  • 20
    • 36549093303 scopus 로고
    • Relaxation of strained-layer semiconductor structures via plastic flow
    • Dodson B.W., and Tsao J.Y. Relaxation of strained-layer semiconductor structures via plastic flow. Appl. Phys. Lett. 51 (1987) 1325-1327
    • (1987) Appl. Phys. Lett. , vol.51 , pp. 1325-1327
    • Dodson, B.W.1    Tsao, J.Y.2
  • 21
    • 0004727293 scopus 로고
    • Non-Newtonian strain relaxation in highly strained SiGe heterostructures
    • Dodson B.W., and Tsao J.Y. Non-Newtonian strain relaxation in highly strained SiGe heterostructures. Appl. Phys. Lett. 53 (1988) 2498-2500
    • (1988) Appl. Phys. Lett. , vol.53 , pp. 2498-2500
    • Dodson, B.W.1    Tsao, J.Y.2
  • 22
    • 0001868302 scopus 로고
    • Stress dependence of dislocation glide activation energy in single-crystal SiGe alloys up to 2.6Gpa
    • Dodson B.W., and Tsao J.Y. Stress dependence of dislocation glide activation energy in single-crystal SiGe alloys up to 2.6Gpa. Phys. Rev. B 38 (1988) 12383-12387
    • (1988) Phys. Rev. B , vol.38 , pp. 12383-12387
    • Dodson, B.W.1    Tsao, J.Y.2
  • 24
    • 3643130905 scopus 로고
    • Dislocation-free Stranski-Krastanov growth of Ge on Si(100)
    • Eaglesham D.J., and Carullo M. Dislocation-free Stranski-Krastanov growth of Ge on Si(100). Phys. Rev. Lett. 64 (1990) 1943-1946
    • (1990) Phys. Rev. Lett. , vol.64 , pp. 1943-1946
    • Eaglesham, D.J.1    Carullo, M.2
  • 25
    • 84950745184 scopus 로고
    • Structural, composition and optical properties of ultrathin Si/Ge superlattices
    • Eberl K., Krötz G., Zachai R., and Abstreiter G. Structural, composition and optical properties of ultrathin Si/Ge superlattices. J. de Phys. C5 (1987) 329-332
    • (1987) J. de Phys. , vol.C5 , pp. 329-332
    • Eberl, K.1    Krötz, G.2    Zachai, R.3    Abstreiter, G.4
  • 26
    • 26144464080 scopus 로고
    • Microscopic symmetry properties of (001) Si/Ge monolayer superlattices
    • Eberl K., Wegscheider W., Schorer R., and Abstreiter G. Microscopic symmetry properties of (001) Si/Ge monolayer superlattices. Phys. Rev. B 43 (1991) 5188-5191
    • (1991) Phys. Rev. B , vol.43 , pp. 5188-5191
    • Eberl, K.1    Wegscheider, W.2    Schorer, R.3    Abstreiter, G.4
  • 27
  • 30
    • 0001456917 scopus 로고
    • New optical transitions in strained Si-Ge superlattices
    • Froyen S., Wood D.M., and Zunger A. New optical transitions in strained Si-Ge superlattices. Phys. Rev. B 36 (1987) 4547-4550
    • (1987) Phys. Rev. B , vol.36 , pp. 4547-4550
    • Froyen, S.1    Wood, D.M.2    Zunger, A.3
  • 32
    • 36449004565 scopus 로고
    • Self-limitation in the surface segregation of Ge atoms during Si molecular beam epitaxial growth
    • Fukatsu Fujita S.K., Yaguchi H., Shiraki Y., and Ito R. Self-limitation in the surface segregation of Ge atoms during Si molecular beam epitaxial growth. Appl. Phys. Lett. 59 (1991) 2103-2105
    • (1991) Appl. Phys. Lett. , vol.59 , pp. 2103-2105
    • Fukatsu Fujita, S.K.1    Yaguchi, H.2    Shiraki, Y.3    Ito, R.4
  • 34
    • 0004114553 scopus 로고
    • 0.35/Si(111) p-type multiple-quantum-well light-emitting diode grown by solid source Si molecular-beam epitaxy
    • 0.35/Si(111) p-type multiple-quantum-well light-emitting diode grown by solid source Si molecular-beam epitaxy. Appl. Phys. Lett. 63 (1993) 967-970
    • (1993) Appl. Phys. Lett. , vol.63 , pp. 967-970
    • Fukatsu, S.1    Usami, N.2    Shiraki Nishida, Y.3    Nakagawa, K.4
  • 35
    • 0028408599 scopus 로고
    • x/Si modulated quantum wells
    • x/Si modulated quantum wells. Solid-State Electronics 4-6 (1994) 817-823
    • (1994) Solid-State Electronics , vol.4-6 , pp. 817-823
    • Fukatsu, S.1
  • 39
    • 0346351646 scopus 로고
    • Direct-gap Si/Ge superlattices
    • Gell M.A. Direct-gap Si/Ge superlattices. Phys. Rev. B 40 (1989) 1966-1968
    • (1989) Phys. Rev. B , vol.40 , pp. 1966-1968
    • Gell, M.A.1
  • 40
    • 0242724320 scopus 로고
    • Optical window in strained-layer Si/Ge microstructures
    • Gell M.A. Optical window in strained-layer Si/Ge microstructures. Appl. Phys. Lett. 55 (1989) 484-485
    • (1989) Appl. Phys. Lett. , vol.55 , pp. 484-485
    • Gell, M.A.1
  • 41
    • 0015974506 scopus 로고
    • Theory of direct optical transitions in an optical indirect semiconductor with a superlattice structure
    • Gnutzmann U., and Clausecker K. Theory of direct optical transitions in an optical indirect semiconductor with a superlattice structure. Appl. Phys. 3 (1974) 9-14
    • (1974) Appl. Phys. , vol.3 , pp. 9-14
    • Gnutzmann, U.1    Clausecker, K.2
  • 44
    • 0001449054 scopus 로고
    • Theory of optical transitions in Si/Ge(001) strained-layer superlattices
    • Hybertsen M.S., and Schlüter M. Theory of optical transitions in Si/Ge(001) strained-layer superlattices. Phys. Rev. B 36 (1987) 9683-9693
    • (1987) Phys. Rev. B , vol.36 , pp. 9683-9693
    • Hybertsen, M.S.1    Schlüter, M.2
  • 46
  • 47
    • 0029329273 scopus 로고
    • n, superlattices and Si-Ge heterostructures. I. Experimental results
    • n, superlattices and Si-Ge heterostructures. I. Experimental results. Ultramicroscopy 59 (1995) 33-45
    • (1995) Ultramicroscopy , vol.59 , pp. 33-45
    • Jäger, W.1    Mayer, J.2
  • 49
    • 0000488396 scopus 로고
    • Localization at imperfect interfaces and its role in optical spectra of quantum well structures
    • Jaros M., and Beavis A.W. Localization at imperfect interfaces and its role in optical spectra of quantum well structures. Appl. Phys. Lett. 63 (1993) 669-671
    • (1993) Appl. Phys. Lett. , vol.63 , pp. 669-671
    • Jaros, M.1    Beavis, A.W.2
  • 50
    • 5244310592 scopus 로고
    • Effect of ordering interface imperfections and clusters and external electric fields on optical spectra of Si-SiGe heterostructures
    • Jaros M., Beavis A.W., Corbin E., Hagon J.P., Turton R.J., and Wong K.B. Effect of ordering interface imperfections and clusters and external electric fields on optical spectra of Si-SiGe heterostructures. J. Vac. Sci. Technol. B11 (1993) 1689
    • (1993) J. Vac. Sci. Technol. , vol.B11 , pp. 1689
    • Jaros, M.1    Beavis, A.W.2    Corbin, E.3    Hagon, J.P.4    Turton, R.J.5    Wong, K.B.6
  • 52
    • 0000068140 scopus 로고
    • Surface segregation of Sb on Si(100) during MBE growth
    • Jorke H. Surface segregation of Sb on Si(100) during MBE growth. Surf. Sci. 193 (1988) 569-572
    • (1988) Surf. Sci. , vol.193 , pp. 569-572
    • Jorke, H.1
  • 53
    • 0016569440 scopus 로고
    • A One-dimensional SiGe superlattice grown by UHV epitaxy
    • Kasper E., Herzog H.J., and Kibbel H. A One-dimensional SiGe superlattice grown by UHV epitaxy. Appl. Phys. 8 (1975) 199-205
    • (1975) Appl. Phys. , vol.8 , pp. 199-205
    • Kasper, E.1    Herzog, H.J.2    Kibbel, H.3
  • 57
    • 0000866247 scopus 로고
    • Investigation of strainsymmetized and pseudomorphic superlattices by X-ray reciprocal space mapping
    • Kopensteiner E., Bauer G., Kibbel H., and Kasper E. Investigation of strainsymmetized and pseudomorphic superlattices by X-ray reciprocal space mapping. J. Appl. Phys. 76 (1994) 3489
    • (1994) J. Appl. Phys. , vol.76 , pp. 3489
    • Kopensteiner, E.1    Bauer, G.2    Kibbel, H.3    Kasper, E.4
  • 68
    • 5644281063 scopus 로고
    • Electronic and optical properties of ultrathin Si/Ge(001) superlattice
    • Morrison J., and Jaros M. Electronic and optical properties of ultrathin Si/Ge(001) superlattice. Phys. Rev. B 37 (1988) 916-921
    • (1988) Phys. Rev. B , vol.37 , pp. 916-921
    • Morrison, J.1    Jaros, M.2
  • 71
    • 0343793808 scopus 로고    scopus 로고
    • Segregation and diffusion on semiconductor surfaces
    • Nützel J.F., and Abstreiter G. Segregation and diffusion on semiconductor surfaces. Phys. Rev. B 53 (1996) 13551-13558
    • (1996) Phys. Rev. B , vol.53 , pp. 13551-13558
    • Nützel, J.F.1    Abstreiter, G.2
  • 74
    • 0042002588 scopus 로고    scopus 로고
    • Confinement effects and polarization dependence of luminescence from monolayerthick Ge quantum wells
    • Olajos J., Engwall J., Grimmeiss H.G., Gail M., Abstreiter G., Presting H., and Kibbel H. Confinement effects and polarization dependence of luminescence from monolayerthick Ge quantum wells. Phys. Rev. B 54 (1996) 1922-1927
    • (1996) Phys. Rev. B , vol.54 , pp. 1922-1927
    • Olajos, J.1    Engwall, J.2    Grimmeiss, H.G.3    Gail, M.4    Abstreiter, G.5    Presting, H.6    Kibbel, H.7
  • 77
    • 0000417646 scopus 로고
    • Indirect quasidirect, and optical transitions in the pseudomorphic (4 × 4)-monolayer Si-Ge strained-layer suprelattice on Si(001)
    • People R., and Jackson S.A. Indirect quasidirect, and optical transitions in the pseudomorphic (4 × 4)-monolayer Si-Ge strained-layer suprelattice on Si(001). Phys. Rev. B 36 (1987) 1310-1313
    • (1987) Phys. Rev. B , vol.36 , pp. 1310-1313
    • People, R.1    Jackson, S.A.2
  • 78
    • 30344472859 scopus 로고
    • Electronic-band parameters in strained SiGe alloys on SiGe substrates
    • Rieger M.M., and Vogl P. Electronic-band parameters in strained SiGe alloys on SiGe substrates. Phys. Rev. B 48 (1993) 14276-14287
    • (1993) Phys. Rev. B , vol.48 , pp. 14276-14287
    • Rieger, M.M.1    Vogl, P.2
  • 80
    • 0000196863 scopus 로고
    • Electronic properties of the (100)(Si)/(Ge) strained-layer superlattices
    • Satpathy S., Martin R.M., and van de Walle C.G. Electronic properties of the (100)(Si)/(Ge) strained-layer superlattices. Phys. Rev. B 38 (1988) 13237-13245
    • (1988) Phys. Rev. B , vol.38 , pp. 13237-13245
    • Satpathy, S.1    Martin, R.M.2    van de Walle, C.G.3
  • 82
    • 0029358642 scopus 로고
    • Photoluminescence study of the crossover from two-dimensional growth for Ge on Si(100)
    • Schittenhelm P., Gail M., Brunner J., Nützel J.F., and Abstreiter G. Photoluminescence study of the crossover from two-dimensional growth for Ge on Si(100). Appl. Phys. Lett. 67 (1995) 1292-1294
    • (1995) Appl. Phys. Lett. , vol.67 , pp. 1292-1294
    • Schittenhelm, P.1    Gail, M.2    Brunner, J.3    Nützel, J.F.4    Abstreiter, G.5
  • 84
    • 0001130167 scopus 로고
    • Electronic and optical properties of strained Ge/Si superlattices
    • Schmid U., Cristensen N.E., Alouani M., and Cardona M. Electronic and optical properties of strained Ge/Si superlattices. Phys. Rev. B 43 (1991) 14597-14614
    • (1991) Phys. Rev. B , vol.43 , pp. 14597-14614
    • Schmid, U.1    Cristensen, N.E.2    Alouani, M.3    Cardona, M.4
  • 87
    • 0009454687 scopus 로고
    • Direct observation of band edge luminescence and alloy luminescence from ultrametastable Si-Ge alloy layers
    • Spitzer J., Thonke K., Sauer R., Kibbel H., Herzog H.J., and Kasper E. Direct observation of band edge luminescence and alloy luminescence from ultrametastable Si-Ge alloy layers. Appl. Phys. Lett. 60 (1992) 1729-1731
    • (1992) Appl. Phys. Lett. , vol.60 , pp. 1729-1731
    • Spitzer, J.1    Thonke, K.2    Sauer, R.3    Kibbel, H.4    Herzog, H.J.5    Kasper, E.6
  • 89
    • 0027639651 scopus 로고
    • 1-x alloys and heterostructures by high-resolution transmission electron microscopy
    • 1-x alloys and heterostructures by high-resolution transmission electron microscopy. Ultramicroscopy 50 (1993) 321-354
    • (1993) Ultramicroscopy , vol.50 , pp. 321-354
    • Stenkamp, D.1    Jäger, W.2
  • 94
    • 0001482414 scopus 로고
    • Unified approach to the electronic structure of strained Si/Ge superattices
    • Tserback C., Polatglou H.M., and Theodorou G. Unified approach to the electronic structure of strained Si/Ge superattices. Phys. Rev. B. 47 (1993) 7104
    • (1993) Phys. Rev. B. , vol.47 , pp. 7104
    • Tserback, C.1    Polatglou, H.M.2    Theodorou, G.3
  • 95
    • 0025494049 scopus 로고
    • Optimization of growth parameters for direct bandgap Si-Ge superlattices
    • Turton R.J., and Jaros M. Optimization of growth parameters for direct bandgap Si-Ge superlattices. Mat. Sci. and Engineering B7 (1990) 37-42
    • (1990) Mat. Sci. and Engineering , vol.B7 , pp. 37-42
    • Turton, R.J.1    Jaros, M.2
  • 96
    • 0028404718 scopus 로고
    • x/Si quantum wells with abrupt interfaces formed by seregant-assisted growth. Jap
    • x/Si quantum wells with abrupt interfaces formed by seregant-assisted growth. Jap. J. Appl. Phys. 33 (1994) 2304
    • (1994) J. Appl. Phys. , vol.33 , pp. 2304
    • Usami, N.1    Fukatsu, S.2    Shiraki, Y.3
  • 97
    • 0028408690 scopus 로고
    • Fabrication of SiGe/Si quantum wire structures on a V-groove patterned Si substrate by gas-source Si molecular beam epitaxy
    • Usami N., Mine T., Fukatsu S., and Shiraki Y. Fabrication of SiGe/Si quantum wire structures on a V-groove patterned Si substrate by gas-source Si molecular beam epitaxy. Solid State Electronics 37 (1994) 539-541
    • (1994) Solid State Electronics , vol.37 , pp. 539-541
    • Usami, N.1    Mine, T.2    Fukatsu, S.3    Shiraki, Y.4
  • 98
    • 0001574878 scopus 로고
    • Enhancement of radiative recombination in Si-based quantum wells with neighboring confinement structure
    • Usami N., Issiki F., Nayak D.K., Shiraki Y., and Fukatsu S. Enhancement of radiative recombination in Si-based quantum wells with neighboring confinement structure. Appl. Phys. Lett. 67 (1995) 524-526
    • (1995) Appl. Phys. Lett. , vol.67 , pp. 524-526
    • Usami, N.1    Issiki, F.2    Nayak, D.K.3    Shiraki, Y.4    Fukatsu, S.5
  • 99
    • 0040071680 scopus 로고    scopus 로고
    • Role of heterointerface on enhancement of no-phnon luminescence in Si-based neihbring confinement structure
    • Usami N., Shiraki Y., and Fukatsu S. Role of heterointerface on enhancement of no-phnon luminescence in Si-based neihbring confinement structure. Appl. Phys. Lett. 68 (1996) 2340-2342
    • (1996) Appl. Phys. Lett. , vol.68 , pp. 2340-2342
    • Usami, N.1    Shiraki, Y.2    Fukatsu, S.3
  • 100
    • 35248858533 scopus 로고
    • Theretical calculations of heterojunction discontinuities in the Si/Ge system
    • van de Walle C.G., and Martin R.M. Theretical calculations of heterojunction discontinuities in the Si/Ge system. Phys. Rev. B. 34 (1986) 5621-5634
    • (1986) Phys. Rev. B. , vol.34 , pp. 5621-5634
    • van de Walle, C.G.1    Martin, R.M.2
  • 102
    • 0028713579 scopus 로고
    • Selective epitaxial growth of SiGe alloys-influence of growth parameters no film properties
    • Vescan L. Selective epitaxial growth of SiGe alloys-influence of growth parameters no film properties. Mater. Sci. Eng. B28 (1994) 1-8
    • (1994) Mater. Sci. Eng. , vol.B28 , pp. 1-8
    • Vescan, L.1
  • 103
    • 36449002434 scopus 로고
    • Simultaneous molecular beam epitaxy growth and scanning tunneling microscopy imaging during Ge/Si epitaxy
    • Voigtänder B., and Zinner A. Simultaneous molecular beam epitaxy growth and scanning tunneling microscopy imaging during Ge/Si epitaxy. Appl. Phys. Lett. 63 (1993) 3055
    • (1993) Appl. Phys. Lett. , vol.63 , pp. 3055
    • Voigtänder, B.1    Zinner, A.2
  • 105
    • 0001157567 scopus 로고
    • Near-bangap photoluminescence of Si-Ge Alloys
    • Weber J., and Alons M.I. Near-bangap photoluminescence of Si-Ge Alloys. Phys. Rev. B. 40 (1989) 5683-5693
    • (1989) Phys. Rev. B. , vol.40 , pp. 5683-5693
    • Weber, J.1    Alons, M.I.2
  • 106
    • 4243592558 scopus 로고
    • Electrnic structure and optical properties of Si-Ge superlattices
    • Wong K.B., Jaros M., Morrison J., and Hagon J.P. Electrnic structure and optical properties of Si-Ge superlattices. Phys. Rev. Lett. 60 (1988) 2221-2224
    • (1988) Phys. Rev. Lett. , vol.60 , pp. 2221-2224
    • Wong, K.B.1    Jaros, M.2    Morrison, J.3    Hagon, J.P.4
  • 108
    • 77956695656 scopus 로고
    • Band structure and optical properties of strain symmetrized short period Si/Ge superlattices on Si(100) substrates
    • Warsaw, Poland, pp
    • R. Zachai E. Friess G. Abstreiter E. Kasper H. Kibbel (1988). Band structure and optical properties of strain symmetrized short period Si/Ge superlattices on Si(100) substrates, Proc. ICPS. 19th, Warsaw, Poland, pp. 487-490
    • (1988) Proc. ICPS. 19th , pp. 487-490
    • Zachai, R.1    Friess, E.2    Abstreiter, G.3    Kasper, E.4    Kibbel, H.5
  • 109
    • 0001210939 scopus 로고
    • Photoluminescence in short-period Si/Ge strained-layer superlattices
    • Zachai R., Eberl K., Abstreiter G., Kasper E., and Kibbel H. Photoluminescence in short-period Si/Ge strained-layer superlattices. Phys. Rev. Lett. 64 (1990) 1055-1058
    • (1990) Phys. Rev. Lett. , vol.64 , pp. 1055-1058
    • Zachai, R.1    Eberl, K.2    Abstreiter, G.3    Kasper, E.4    Kibbel, H.5


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.