Dirac tunneling magnetoresistance in a double ferromagnetic graphene barrier structure

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 41, Issue 7, 2009, Pages 1310-1314

  Soodchomshom, Bumned ^a,b   Tang, I Ming ^a   Hoonsawat, Rassmidara ^a  

^a Mahidol University ^*  (Thailand)

^b PATHUMWAN INSTITUTE OF TECHNOLOGY   (Thailand)

Author keywords

Dirac electron tunneling; Graphene; Magnetoresistance; Quantum modulation

Indexed keywords

BARRIER STRUCTURES; DIRAC ELECTRON TUNNELING; ELECTRICAL CONDUCTANCE; EXCHANGE ENERGY; EXCHANGE FIELDS; FERMI VELOCITIES; GATE VOLTAGES; GRAPHENE; GRAPHENE LAYERS; MAGNETO TRANSPORT PROPERTIES; MAXIMAL VALUES; MULTILAYER JUNCTIONS; OSCILLATORY BEHAVIORS; OSCILLATORY DEPENDENCE; QUANTUM CONDUCTANCE; QUANTUM MODULATION; SPEED OF LIGHT; SPIN-DOWN; SPIN-UP; TUNNELING MAGNETORESISTANCE; ZERO BIAS;

ELECTRIC RESISTANCE; ELECTRON TRANSITIONS; ELECTRON TUNNELING; FERROMAGNETIC MATERIALS; FERROMAGNETISM; MAGNETIC FIELD EFFECTS; MAGNETOELECTRONICS; MAGNETORESISTANCE; MODULATION; POWER CONVERTERS; SOUND REPRODUCTION; SPIN DYNAMICS; TRANSPORT PROPERTIES; TUNNELING (EXCAVATION);

QUANTUM CHEMISTRY;

EID: 67349283103     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physe.2009.03.002     Document Type: Article

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