High robustness of correlation-based alignment with Penrose patterns to marker damage in electron beam lithography

Microelectronic Engineering

Volumn 86, Issue 4-6, 2009, Pages 532-534

  Docherty, K E ^a   Lister, K A ^b   Romijn, J ^c   Weaver, J M R ^a  

^a UNIVERSITY OF GLASGOW   (United Kingdom)

^b Fédérale de Lausanne   (Switzerland)

^c Vistec Lithography BV   (Netherlands)

Author keywords

Alignment; Correlation; Electron beam lithography; Marker damage; Penrose patterns

Indexed keywords

ALIGNMENT ACCURACIES; ALIGNMENT METHODS; CORRELATION; EDGE DEFECTS; FABRICATED STRUCTURES; HIGH ROBUSTNESS; MARKER DAMAGE; PENROSE PATTERNS; POSITIONAL INFORMATIONS;

CORRELATION METHODS; DEFECTS; ELECTRON BEAM LITHOGRAPHY; ELECTRON BEAMS; ELECTRONS;

ALIGNMENT;

EID: 67349235570     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2008.11.037     Document Type: Article

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