Enhanced luminescence of GaN-based light-emitting diode with a localized surface plasmon resonance

Microelectronic Engineering

Volumn 86, Issue 4-6, 2009, Pages 1120-1123

  Sung, Jun Ho ^a   Kim, Bo Soon ^a   Choi, Chul Hyun ^a   Lee, Min Woo ^a   Lee, Seung Gol ^a   Park, Se Geun ^a   Lee, El Hang ^a   Beom Hoan, O ^a  

^a Inha University   (South Korea)

Author keywords

Gold nanoparticle; Light emitting diode; Localized surface plasmon

Indexed keywords

ANNEALING PROCESS; ANNEALING TEMPERATURES; AU NANOPARTICLES; DENSITY OF PARTICLES; ELECTROLUMINESCENCE INTENSITIES; ENHANCED LUMINESCENCES; FILLING FACTORS; GAN-BASED LIGHT-EMITTING DIODES; GOLD NANOPARTICLE; LIGHT OUTPUTS; LIGHT-EMITTING DIODE; LIGHT-EXTRACTION EFFICIENCIES; LOCALIZED SURFACE PLASMON; LOCALIZED SURFACE PLASMON RESONANCES; LUMINOUS EFFICIENCIES; SCATTERING-BY-ROUGH SURFACES; TRAPPED LIGHTS;

CURRENT DENSITY; DIODES; EXTRACTION; GALLIUM ALLOYS; GALLIUM NITRIDE; LIGHT; LIGHT EMITTING DIODES; LUMINESCENCE; NANOPARTICLES; ORGANIC LIGHT EMITTING DIODES (OLED); PLASMONS; SEMICONDUCTING GALLIUM; SURFACE PLASMON RESONANCE;

GOLD;

EID: 67349222804     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2009.01.009     Document Type: Article

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