Analysis of copper ion filaments and retention of dual-layered devices for resistance random access memory applications

Microelectronic Engineering

Volumn 86, Issue 7-9, 2009, Pages 1929-1932

  Yoon, Jaesik ^a   Lee, Joonmyoung ^a   Choi, Hyejung ^a   Park, Ju Bong ^a   Seong, Dong jun ^a   Lee, Wootae ^a   Cho, Chunhum ^a   Kim, Seonghyun ^a   Hwang, Hyunsang ^a  

^a Gwangju Institute of Science and Technology (GIST)   (South Korea)

Author keywords

Copper filament; Dual layer; Resistance random access memory (ReRAM)

Indexed keywords

ALTERNATING VOLTAGES; CONDUCTIVE ATOMIC FORCE MICROSCOPY; COPPER IONS; CURRENT PATHS; DEVICE PERFORMANCE; DUAL LAYER STRUCTURE; DUAL-LAYER; FILAMENT FORMATION; FORMING PROCESS; ION RETENTION; LOW RESISTANCE; NON-VOLATILE MEMORY APPLICATION; PULSE SWITCHING; RESISTANCE RANDOM ACCESS MEMORY; RESISTANCE RANDOM ACCESS MEMORY (RERAM); RESISTANCE VALUES; ULTRA-THIN;

ATOMIC FORCE MICROSCOPY; COPPER; FILAMENTS (LAMP); METAL IONS; STAINLESS STEEL;

RANDOM ACCESS STORAGE;

EID: 67349183225     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2009.03.102     Document Type: Article

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