Write-once read-many-times memory based on a single layer of pentacene

IEEE Electron Device Letters

Volumn 30, Issue 4, 2009, Pages 343-345

  Shi, Shengwei ^a,b   Peng, Junbiao ^a   Lin, Jian ^c   Ma, Dongge ^c  

^a SOUTH CHINA UNIVERSITY OF TECHNOLOGY   (China)

^b INSTITUT DE PHYSIQUE ET CHIMIE DES MATÉRIAUX DE STRASBOURG   (France)

^c CHANGCHUN INSTITUTE OF APPLIED CHEMISTRY   (China)

Author keywords

Interface dipole; On off ratio; Pentacene; Reliability; Write once read many times (WORM)

Indexed keywords

APPLIED VOLTAGES; CURRENT CONDUCTIONS; CURRENT TRANSITIONS; FOWLER-NORDHEIM TUNNELING; INTERFACE DIPOLE; ITO ELECTRODES; MEMORY DEVICES; ON/OFF CURRENT RATIOS; ON/OFF RATIO; ORDERS OF MAGNITUDES; PENTACENE; PENTACENE FILMS; SIMPLE STRUCTURES; SINGLE LAYERS; STORAGE TIME; WRITE ONCE READ MANY TIMES (WORM);

ELECTRIC FIELDS; ELECTRON TUBE DIODES;

SEMICONDUCTING ORGANIC COMPOUNDS;

EID: 67349139332     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2009.2013976     Document Type: Article

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