The effects of deposition temperature on structure and dielectric properties of Ba0.6Sr0.4TiO3 thin films produced by pulsed laser deposition

Ceramics International

Volumn 35, Issue 6, 2009, Pages 2283-2287

  Zhao, Min ^a   Cao, Wan Qiang ^a  

^a HUBEI UNIVERSITY   (China)

Author keywords

BST thin film; Dielectric relaxation; Oxygen pressure; Pulsed laser deposition

Indexed keywords

BST THIN FILM; COLE-COLE MODELS; CRYSTAL GRAIN SIZE; CRYSTALLINITY; DEPOSITION TEMPERATURES; DIELECTRIC PERMITTIVITIES; MAXWELL-WAGNER-SILLARS; OXYGEN PRESSURE; PREFERRED ORIENTATIONS; RELATIVE DIELECTRIC CONSTANT; RELAXATION FUNCTIONS; SI SUBSTRATES; SUBSTRATE TEMPERATURE; TIO;

BARIUM; CERAMIC CAPACITORS; DEPOSITION; DIELECTRIC LOSSES; DIELECTRIC RELAXATION; DIFFRACTION; HOLOGRAPHIC INTERFEROMETRY; LASERS; OXYGEN; PERMITTIVITY; PULSED LASER DEPOSITION; SUBSTRATES; THIN FILM DEVICES; THIN FILMS;

DIELECTRIC MATERIALS;

EID: 67349133922     PISSN: 02728842     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ceramint.2009.01.004     Document Type: Article

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