High temperature carrier mobility as an intrinsic transport parameter of an organic semiconductor

Organic Electronics

Volumn 10, Issue 4, 2009, Pages 661-665

  Tsung, K K ^a   So, S K ^a  

^a HONG KONG BAPTIST UNIVERSITY   (Hong Kong)

Author keywords

Charge transport; High temperature limit of carrier mobility; NPB; Organic semiconductor

Indexed keywords

CARRIER TRANSPORT; CHARGE TRANSFER; DOPING (ADDITIVES); FIELD EFFECT TRANSISTORS; SEMICONDUCTING ORGANIC COMPOUNDS; TEMPERATURE DISTRIBUTION;

COPPER PHTHALOCYANINE; EFFECT OF DOPANTS; HIGH TEMPERATURE; MOBILITY PREDICTIONS; TEMPERATURE DEPENDENCE; TIME-OF-FLIGHT TECHNIQUES; TRANSPORT PARAMETERS; ZERO FIELDS;

HOLE MOBILITY;

EID: 67349106746     PISSN: 15661199     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.orgel.2009.02.014     Document Type: Article

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