CdS thin films obtained by thermal treatment of cadmium(II) complex precursor deposited by MAPLE technique

Applied Surface Science

Volumn 255, Issue 15, 2009, Pages 6786-6789

  Rotaru, Andrei ^a   Mietlarek Kropidłowska, Anna ^b   Constantinescu, Catalin ^a   Scǎrişoreanu, Nicu ^a   Dumitru, Marius ^a   Strankowski, Michal ^b   Rotaru, Petre ^c   Ion, Valentin ^a   Vasiliu, Cristina ^d   Becker, Barbara ^b   Dinescu, Maria ^a  

^a NATIONAL INSTITUTE FOR LASER   (Romania)

^b GDANSK UNIVERSITY OF TECHNOLOGY   (Poland)

^c UNIVERSITY OF CRAIOVA   (Romania)

^d NATIONAL INSTITUTE FOR OPTOELECTRONICS   (Romania)

Author keywords

Cadmium(II) coordination compound; MAPLE; Precursor for CdS layers; Spectroscopic ellipsometry; Thermal treatment

Indexed keywords

ATOMIC FORCE MICROSCOPY; CADMIUM SULFIDE; COORDINATION REACTIONS; FOURIER TRANSFORM INFRARED SPECTROSCOPY; HEAT TREATMENT; II-VI SEMICONDUCTORS; PULSED LASER DEPOSITION; SEMICONDUCTING FILMS; SPECTROSCOPIC ELLIPSOMETRY; SUBSTRATES; THERMOANALYSIS;

CADMIUM COMPLEX; CDS LAYER; CDS THIN FILMS; COORDINATION COMPLEX; COORDINATION COMPOUNDS; MAPLE; MATRIX ASSISTED PULSED LASER EVAPORATION; SILICON SUBSTRATES;

THIN FILMS;

EID: 67349095695     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2009.02.062     Document Type: Article

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