Deposition of cadmium sulphide thin films from the single-source precursor bis(diethylmonothiocarbamato)cadmium(II) by low-pressure metalorganic chemical vapour deposition

Advanced Materials for Optics and Electronics

Volumn 7, Issue 6, 1997, Pages 311-316

  Chunggaze, M ^a   Malik, M Azad ^a   O'Brien, P ^a  

^a IMPERIAL COLLEGE LONDON   (United Kingdom)

Author keywords

Cadmium sulphide; MOCVD; Monothiocarbamate; Precursor

Indexed keywords

BOROSILICATE GLASS; ENERGY GAP; FILM GROWTH; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING CADMIUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SUBSTRATES; X RAY DIFFRACTION ANALYSIS;

CADMIUM SULPHIDE; LOW PRESSURE METALLORGRANIC CHEMICAL VAPOR DEPOSITION (LP MOCVD); MONOTHIOCARBAMATE;

THIN FILMS;

EID: 0031269239     PISSN: 10579257     EISSN: None     Source Type: Journal    
DOI: 10.1002/(SICI)1099-0712(199711/12)7:6<311::AID-AMO321>3.0.CO;2-W     Document Type: Article

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