Cost of ownership for future lithography technologies

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 7140, Issue , 2008, Pages

  Hazelton, Andrew J ^a   Wüest, Andrea ^b   Hughes, Greg ^b   Litt, Lloyd C ^b   Goodwin, Frank ^b  

^a NIKON CORPORATION   (Japan)

^b SEMATECH   (United States)

Author keywords

Cost of ownership; Double patterning; EUVL; Lithography; Mask costs

Indexed keywords

COST ADVANTAGES; COST OF OWNERSHIP; DOUBLE PATTERNING; EUVL; EXTREME ULTRA-VIOLET LITHOGRAPHIES; LEADING EDGES; MASK COSTS; MOORE'S LAWS; PROCESS STEPS; SENSITIVITY STUDIES; WORST CASE;

EXTREME ULTRAVIOLET LITHOGRAPHY; MASKS; TECHNOLOGY;

COSTS;

EID: 62449184916     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.804711     Document Type: Conference Paper

References (3)

1. International Technology Roadmap for Semiconductors, 2007 Update, Lithography chapter. www.itrs.org
2. Seidel, Phil, "EUV Lithography Cost-of-Ownership Considerations," 2007 EUVL Symposium, Sapporo, Japan. October 29, 2007.
3. Hughes, Greg, "Mask and wafer cost of ownership from 65 to 22nm half-pitch nodes," to be published in Proc. of SPIE Vol. 7028, 7028-60 (2008).