Evaluation at the intermediate focus for EUV Light Source

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 7271, Issue , 2009, Pages

  Suganuma, Takashi ^a   Soumagne, Georg ^a   Moriya, Masato ^a   Abe, Tamotsu ^a   Sumitani, Akira ^a   Endo, Akira ^a  

^a Extreme Ultra Violet Lithography System Development Association   (Japan)

Author keywords

Evaluation of EUV; Extreme ultraviolet lithography; Intermediate focus; Laser produced plasma

Indexed keywords

CO2-LASER; ENERGY STABILITY; EUV EMISSIONS; EUV LIGHT SOURCES; EVALUATION OF EUV; IN-BAND; INTERMEDIATE FOCUS; METROLOGY TOOLS; OUT OF BAND; PHOSPHOR PLATE; PLASMA LIGHT SOURCE; POWER-SCALING; RADIATED POWER; REGION OF INTEREST; SOURCE CHARACTERISTICS; SPECTRAL PURITY; WAVELENGTH REGIONS; X RAY DIODE;

CHARGE COUPLED DEVICES; LASER PRODUCED PLASMAS; LASER PULSES; LASERS; LIGHT; LIGHTING; TIN; ULTRAVIOLET DEVICES;

EXTREME ULTRAVIOLET LITHOGRAPHY;

EID: 67149099821     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.813494     Document Type: Conference Paper

References (4)

1. A. Miyake, H. Kanazawa, V. Banine and K.Suzuki : "Joint Requirements", EUV Source Workshop, Barcelona, SPAIN, Oct. 19 (2006)
2. K. Nishihara, A. Sasaki, A. Sunahara, and T. Nishikawa, EUV Sources for Lithography, Chap. 11, ed. V. Bakshi, SPIE, Bellingham, (2005).
3. 2 and Nd:YAG laser-produced tin plasmas" Appl. Phys. Lett. 87, 041503 (2005)
4. 2 Laser Produced Xe Plasma EUV Light Source for Microlithography", Proc. SPIE 6151, 61510S (2006)