Detailed numerical simulation of the effect of defects created by electron irradiation on the performance degradation of a p+-n-n+ GaAs solar cell

Renewable Energy

Volumn 34, Issue 11, 2009, Pages 2422-2425

  Meftah, A F ^a   Sengouga, N ^a   Meftah, A M ^a   Belghachi, A ^b  

^a UNIVERSITY OF BISKRA   (Algeria)

^b UNIVERSITY OF BECHAR   (Algeria)

Author keywords

Degradation; Electron irradiation; GaAs; Solar cell

Indexed keywords

DEEP ELECTRON TRAPS; ELECTRON AND HOLE TRAPS; FILL FACTOR; GAAS; GAAS SOLAR CELLS; IRRADIATION-INDUCED DEFECTS; IRRADIATION-INDUCED DEGRADATION; NUMERICAL SIMULATION; OUTPUT PARAMETERS; PERFORMANCE DEGRADATION; RECOMBINATION CENTRES; SIMULATION RESULT; SOLAR CELL OUTPUT PARAMETERS; STRUCTURAL DEFECT; TRAP LEVELS;

CONVERSION EFFICIENCY; CURRENT VOLTAGE CHARACTERISTICS; DEFECTS; DEGRADATION; ELECTRONS; GALLIUM ALLOYS; PHOTOVOLTAIC CELLS; RADIATION; SEMICONDUCTING GALLIUM; SOLAR CELLS; SOLAR ENERGY; STRONTIUM COMPOUNDS;

ELECTRON IRRADIATION;

DEGRADATION; EFFICIENCY MEASUREMENT; ELECTRON; IRRADIATION; NUMERICAL MODEL; PERFORMANCE ASSESSMENT;

EID: 67149090902     PISSN: 09601481     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.renene.2009.03.019     Document Type: Article

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