Solar cell degradation by electron irradiation. Comparison between Si, GaAs and GaInP cells

Solar Energy Materials and Solar Cells

Volumn 66, Issue 1-4, 2001, Pages 495-500

  De Angelis, N ^a   Bourgoin, J C ^a   Takamoto, T ^b   Khan, A ^c   Yamaguchi, M ^b  

^a SORBONNE UNIVERSITÉ   (France)

^b JAPAN ENERGY CORPORATION   (Japan)

^c TOYOTA TECHNOLOGICAL INSTITUTE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

RADIATION HARDENING; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTING SILICON; SHORT CIRCUIT CURRENTS; SOLAR RADIATION;

ELECTRON IRRADIATION; OPEN CIRCUIT VOLTAGE;

SOLAR CELLS;

EID: 0035254691     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0927-0248(00)00211-7     Document Type: Article

References (9)

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