Very-low-driving-voltage electroabsorption modulators operating at 40 Gb/s

Journal of Lightwave Technology

Volumn 24, Issue 5, 2006, Pages 2219-2224

  Fukano, Hideki ^a   Yamanaka, Takayuki ^a   Tamura, Munehisa ^a   Kondo, Yasuhiro ^a  

^a NTT CORPORATION   (Japan)

Author keywords

Electroabsorption; Electroabsorption modulator (EAM); InGaAlAs InGaAs; Low driving voltage

Indexed keywords

ELECTRIC VARIABLES MEASUREMENT; FABRICATION; LIGHT ABSORPTION; OPTICAL FREQUENCY CONVERSION; OPTICAL VARIABLES MEASUREMENT; QUANTUM OPTICS;

ELECTROABSORPTION MODULATORS; EXTINCTION RATIO; LOW-DRIVING VOLTAGE;

LIGHT MODULATORS;

EID: 33646947270     PISSN: 07338724     EISSN: None     Source Type: Journal    
DOI: 10.1109/JLT.2006.872310     Document Type: Article

References (17)

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