Perspectives of (sub-) 32nm CMOS for analog/RF and mm-wave applications

2008 European Microwave Integrated Circuit Conference, EuMIC 2008

Volumn , Issue , 2008, Pages 103-106

  Dehan, M ^a   Parvais, B ^a   Mercha, A ^a   Subramanian, V ^b   Groeseneken, G ^a,b  

^a Kapeldreef 75   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

ADVANCED PROCESS; BULK CMOS; DEVICE ARCHITECTURES; FINFETS; MM-WAVE; MM-WAVE APPLICATION; NEW PROCESS; SUB-CIRCUITS;

MICROWAVE INTEGRATED CIRCUITS; MILLIMETER WAVES;

INTEGRATED CIRCUIT MANUFACTURE;

EID: 66649096448     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/EMICC.2008.4772239     Document Type: Conference Paper

References (5)

1. http://public.itrs.net
2. J. McPherson et al., "Trends in the ultimate breakdown strength of high-dielectric constant materials", IEEE Trans. Electron Devices, Vol. 50, No. 8, pp. 1771-1778, August 2003.
3. V. Subramanian et al., "Device and circuit-level analog performance trade-offs: a comparative study of planar bulk FETs versus FinFETS", Proceedings IEDM 2005, pp. 919-922, 2005.
4. C. Gustin et al., "Stochastic matching properties of FinFETs", submitted to Electron Device Letters, 2006.
5. Z.M. Rittersma et al., "Mixed Signal and noise properties of NMOSFETs with HfSiON/TaN gate stack", Proceedings ESSDERC 2005, pp. 105-108, 2005. (Pubitemid 44816038)