Semiconductor-based superlens for subwavelength resolution below the diffraction limit at extreme ultraviolet frequencies

Journal of Applied Physics

Volumn 105, Issue 10, 2009, Pages

  Vincenti, M A ^a,b   D'Orazio, A ^a   Cappeddu, M G ^b   Akozbek, Nesetl ^b   Bloemer, M J ^b   Scalora, M ^b,c  

^a POLITECNICO DI BARI   (Italy)

^b Charles M Bowden Research Center   (United States)

^c SAPIENZA UNIVERSITY OF ROME   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

BASIC PROPERTIES; DIFFRACTION LIMITS; EXTREME ULTRAVIOLET; EXTREME UV; GAAS; METALLODIELECTRIC; MULTILAYER STACKS; NEGATIVE REFRACTIONS; PHOTONIC BAND-GAP STRUCTURES; SOFT X-RAY RANGE; SUBWAVELENGTH RESOLUTION; SUPERLENS; UV- AND;

ELECTROMAGNETIC WAVE DIFFRACTION; GALLIUM ALLOYS; LIGHT REFRACTION; MULTILAYERS; REFRACTION;

PHOTONIC BAND GAP;

EID: 66549111011     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3126712     Document Type: Article

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