Exciton energy levels of (nc-Si/SiO2)/SiO2 multi-layer quantum dots structure

Guangxue Xuebao/Acta Optica Sinica

Volumn 29, Issue 5, 2009, Pages 1320-1323

  Chen, Libai ^a   Guo, Zhenning ^a   Yang, Xiaoru ^a  

^a HUAQIAO UNIVERSITY   (China)

Author keywords

Effective mass approximation; Energy level of exciton; Finitely deep potential well; Infinitely deep potential well; Quantum dots of silicon

Indexed keywords

EFFECTIVE MASS APPROXIMATION; ENERGY LEVEL OF EXCITON; FINITELY DEEP POTENTIAL WELL; INFINITELY DEEP POTENTIAL WELL; QUANTUM DOTS OF SILICON;

APPROXIMATION THEORY; EXCITONS; OPTICAL WAVEGUIDES; SILICON COMPOUNDS; SILICON OXIDES;

SEMICONDUCTOR QUANTUM DOTS;

EID: 66449102128     PISSN: 02532239     EISSN: None     Source Type: Journal    
DOI: 10.3788/AOS20092905.1320     Document Type: Article

References (11)

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