Size- and temperature-independent zero-offset current-voltage characteristics of GaInP/GaAs collector-up tunnelling-collector heterojunction bipolar transistors

Electronics Letters

Volumn 37, Issue 4, 2001, Pages 252-253

  Mochizuki, K ^a   Oka, T ^a   Ohbu, I ^a  

^a HITACHI LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRON TUNNELING; MICROWAVE AMPLIFIERS; POWER AMPLIFIERS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; THERMAL EFFECTS;

COLLECTOR EMITTER OFFSET VOLTAGE; COLLECTOR-UP TUNNELING COLLECTOR TRANSISTORS; HIGH POWER AMPLIFIERS; TRANSISTOR SIZE; TRANSISTOR TEMPERATURE;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 6644221929     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20010154     Document Type: Article

References (4)

1. LIU, W., KIM, T., IKALAINEN, P., and KHATIBZADEH, A.: 'High linearity power X-band GaInP/GaAs heterojunction bipolar transistor', IEEE Electron Device Lett., 1994, 15, (4), pp. 191-192
2. BOVOLON, N., SCHULTHESIS, R., MUELLER, J.-R., ZWIVKNGL, P., and ZANONI, E.: 'Theoretical and experimental investigation of the collector-emitter offset voltage of AlGaAs/GaAs heterojunction bipolar transistors', IEEE Trans. Electron Devices, 1999, 46, (4), pp. 622-627
3. MOCHIZUKI, K., WELTY, R.J., ASBECK, P.M., LUTZ, C.R., WELSER, R.E., WHITNEY, S.J., and PAN, N.: 'GaInP/GaAs collector-up tunneling-collector heterojunction bipolar transistors (C-up TC-HBTs): optimization of fabrication process and epitaxial layer structure for high-efficiency high power amplifiers', IEEE Trans. Electron Devices, 2000, 47, (12), pp. 2277-2283
4. GIRARDOT, A., HENKEL, A., DELAGE, S.L., DIFORTE-POISSON, M.A., CHARTIER, E., FLORIOT, D., CASSETTE, S., and ROLLAND, P.A.: 'High performance collector-up InGaP/GaAs heterojunction bipolar transistor with Schottky contact'. Electron. Lett., 1999, 35, (8), pp. 670-672