Nanomechanical switches for power saving in CMOS applications

Electronics Letters

Volumn 45, Issue 11, 2009, Pages 550-551

  Czaplewski, D A ^a   Kraus, G M ^a   Nordquist, C D ^a  

^a SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPLEMENTARY METAL OXIDE SEMICONDUCTORS; DC PERFORMANCE; NANOMECHANICAL SWITCHES; OPERATING VOLTAGE; POWER CONSUMPTION; POWER SAVINGS; SUBTHRESHOLD SLOPE; SWITCHING TIME; THROUGH CURRENT;

TIME SWITCHES;

SWITCHES;

EID: 66249111155     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el.2009.0523     Document Type: Article

References (5)

1. Haensch, W., Nowak, E.J., Dennard, R.H., Solomon, P.M., Bryant, A., Dokumaci, O.H., Kumar, A., Wang, X., Johnson, J.B., and Fischetti, M.V.: ' Silicon CMOS devices beyond scaling ', IBM J. Res. Dev., 2006, 50, p. 339-361A 0018-8646
2. Nathanson, H.C., Newell, W.E., Wickstrom, R.A., and Davis, J.R.: ' The resonant gate transistor ', IEEE Trans. Electron Devices, 1967, 14, p. 117-133 0018-9383
3. Peterson, K.E.: ' Micromechanical membrane switches on silicon ', IBM J. Res Dev., 1979, 23, p. 376-385 0018-8646
4. Jang, W.W., Lee, J.O., Yoon, J.B., Kim, M.S., Lee, J.M., Kim, S.M., Cho, K.H., Kim, D.W., Park, D., and Lee, W.S.: ' Fabrication and characterization of a nanoelectromechanical switch with 15-nm-thick suspension air gap ', Appl. Phys. Lett., 2008, 92, p. 103110 10.1063/1.2892659 0003-6951
5. Damayanti, M., Sritharan, T., Mhaisalkar, S.G., and Gan, Z.H.: ' Effects of dissolved nitrogen in improving barrier properties of ruthenium ', Appl. Phys. Lett., 2006, 88, p. 044101 10.1063/1.2167610 0003-6951