A vision of fram as a fusion memory

Integrated Ferroelectrics

Volumn 96, Issue 1, 2008, Pages 100-111

  Kim, Kinam ^a   Jung, D J ^a  

^a SAMSUNG Electronics   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

FERROELECTRIC RANDOM ACCESS MEMORIES; FULL INTEGRATION; HIGH DENSITY; PROCESS TECHNOLOGIES; WAFER LEVEL;

CELL MEMBRANES; INTEGRATION; RANDOM ACCESS STORAGE;

FERROELECTRIC DEVICES;

EID: 66149143469     PISSN: 10584587     EISSN: 16078489     Source Type: Journal    
DOI: 10.1080/10584580802101125     Document Type: Article

References (11)

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