Elastic, electronic and optical properties of SiGe2N4 under pressure: An ab initio study

Physics Letters, Section A: General, Atomic and Solid State Physics

Volumn 373, Issue 27-28, 2009, Pages 2393-2398

  Moakafi, M ^a   Khenata, R ^a   Bouhemadou, A ^b   Benkhettou, N ^c   Rached, D ^c   Reshak, Ali H ^d  

^a UNIVERSITÉ DE MASCARA   (Algeria)

^b FERHAT ABBAS UNIVERSITY   (Algeria)

^c UNIVERSITY OF SIDI BEL ABBES   (Algeria)

^d UNIVERSITY OF SOUTH BOHEMIA   (Czech Republic)

Author keywords

Elastic constants; Electronic properties; FP APW + lo; Optical constants; Pressure effects

Indexed keywords

CALCULATIONS; ELASTIC CONSTANTS; ELECTRONIC PROPERTIES; ENERGY GAP; GERMANIUM COMPOUNDS; OPTICAL CONSTANTS; PRESSURE EFFECTS; REFRACTIVE INDEX; SILICON COMPOUNDS; STRUCTURAL PROPERTIES;

COMPLEX DIELECTRIC FUNCTIONS; ELECTRONIC AND OPTICAL PROPERTIES; EXCHANGE CORRELATION ENERGY; FIRST-PRINCIPLES DENSITY FUNCTIONAL CALCULATIONS; FP-APW + LO; GENERALIZED GRADIENT APPROXIMATIONS; PRESSURE COEFFICIENTS; STATIC DIELECTRIC CONSTANTS;

NITROGEN COMPOUNDS;

EID: 66049129291     PISSN: 03759601     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physleta.2009.05.004     Document Type: Article

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