Fundamental study of optical threshold layer approach towards double exposure lithography

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 7273, Issue , 2009, Pages

  Gu, Xinyu ^a   Berro, Adam J ^b   Cho, Younjin ^a   Jen, Kane ^a   Lee, Saul ^a   Nagai, Tomoki ^a   Ogata, Toshiyuki ^b   Durand, William J ^a   Sundaresan, Arunkumar ^c   Lancaster, Jeffrey R ^c   Jockusch, Steffen ^c   Zimmerman, Paul ^d   Turro, Nicholas J ^c   Grant Willson, C ^a,b  

^a The University of Texas at Austin   (United States)

^b University of Texas at Austin   (United States)

^c Och Spine at New York Presbyterian Hospitals   (United States)

^d INTEL CORPORATION   (United States)

Author keywords

Acid detector; Azobenzene; Barrier layer; Diffusion switch; Double exposure lithography; Non linear response; Optical threshold layer; Poly(n alkyl methacrylate); Side chain crystal polymer

Indexed keywords

BARRIER LAYER; DOUBLE EXPOSURE LITHOGRAPHY; NON-LINEAR RESPONSE; OPTICAL THRESHOLD LAYER; POLY(N-ALKYL METHACRYLATE); SIDE CHAIN CRYSTAL POLYMER;

ACIDS; ALKYLATION; COBALT COMPOUNDS; COST REDUCTION; NANOTECHNOLOGY; PHOTOPOLYMERS; POLYACRYLATES; POLYMERS; TECHNOLOGY; ULTRAVIOLET DEVICES;

PHOTOLITHOGRAPHY;

EID: 65849502450     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.814298     Document Type: Conference Paper

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