32 nm Half pitch formation with high numerical aperture single exposure

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 7274, Issue , 2009, Pages

  Jung, Minhee ^a   Park, Joon Min ^a   Kim, Moonseok ^b   Hong, Sukjoon ^b   Kim, Jaisoon ^b   Park, In Ho ^c   Oh, Hye Keun ^a  

^a Hanyang University   (South Korea)

^b Seoul National University   (South Korea)

^c SolarLight Ltd   (South Korea)

Author keywords

1.55 NA; 32 nm half pitch; ArF lithography; High index immersion technology

Indexed keywords

1.55 NA; 32 NM HALF PITCH; ARF IMMERSION LITHOGRAPHY; ARF LITHOGRAPHY; DOUBLE PATTERNING; HIGH INDEX FLUID; HIGH INDEX MATERIALS; HIGH NA; HIGH NUMERICAL APERTURES; HIGH-INDEX IMMERSION TECHNOLOGY; HIGHER INDEX; ILLUMINATION CONDITIONS; IMMERSION TECHNOLOGY; LINE-AND-SPACE; NEXT GENERATION LITHOGRAPHY; NUMERICAL APERTURE; PITCH FORMATION; ROADMAP; SINGLE EXPOSURE; THIRD GENERATION; WATER IMMERSION;

PHOTOLITHOGRAPHY; TECHNOLOGICAL FORECASTING;

TECHNOLOGY;

EID: 65849255850     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.814103     Document Type: Conference Paper

References (3)

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2. E. Piscani, D. Ashworth, J. Byers, C. V. Peski, P. Zimmerman, and B. J. Rice: Proc. SPIE 6924, 692421 (2008)
3. T. Kumazaki, T. Suzuki, S. Tanaka, R. Nohdomi, M. Yoshino, S. Matsumoto, Y. Kawasuji, H. Umeda, H. Nagano, K. Kakizaki, H. Nakarai, T. Matsunaga, J. Fujimoto, and H. Mizoguchi: Proc. SPIE 6924, 69242R (2008)