EUV resist outgassing quantification and application

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 7273, Issue , 2009, Pages

  Kobayashi, Shinji ^a   Santillan, Julius Joseph ^a   Oizumi, Hiroaki ^a   Itani, Toshiro ^a  

^a SEMICONDUCTOR LEADING EDGE TECHNOLOGIES INC   (Japan)

Author keywords

EUV lithography; GC MS; Pressure rise; Resist outgassing

Indexed keywords

ACCURATE ANALYSIS; ANALYSIS METHOD; EUV LITHOGRAPHY; EUV RESISTS; GAS CHROMATOGRAPHY-MASS SPECTROMETRY; GC-MS; HIGH-VACUUM CONDITIONS; LOWER LIMITS; MEASUREMENT CONDITIONS; MEASUREMENT QUALITY; MEASUREMENT RESULTS; OUTGASSING ANALYSIS; OUTGASSING COMPONENTS; OUTGASSING QUANTIFICATION; OUTGASSING RATE; PHOTOACID GENERATORS; PRESSURE RISE; PROTECTING GROUP; QUALITATIVE ANALYSIS; RESIST OUTGASSING;

CHROMATOGRAPHIC ANALYSIS; DEGASSING; GAS CHROMATOGRAPHY; MASS SPECTROMETRY; ULTRAVIOLET DEVICES;

QUALITY CONTROL;

EID: 65849148619     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.813362     Document Type: Conference Paper

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