Utilization of spin-on and reactive ion etch critical dimension shrink with double patterning for 32 nm and beyond contact level interconnects

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 7273, Issue , 2009, Pages

  Perrillo, Karen ^a   Horak, Dave ^a   Fan, Susan ^a   McLellan, Erin ^a   Colburn, Matt ^a   Metz, Andrew ^b   Dunn, Shannon ^b   Hetzer, Dave ^b   Cantone, Jason ^c   Ueda, Kenichi ^c   Winter, Tom ^c   Balasubramaniam, Vaidyanathan ^b   Tang, Cherry ^d   Slezák, Mark ^d  

^a IBM   (United States)

^b TEL TECHNOLOGY CENTER   (United States)

^c TOKYO ELECTRON AMERICA INC   (United States)

^d JSR Microelectronic Materials   (United States)

Author keywords

Chemical shrink; Contact shrink; Double patterning; Immersion lithography; LELE; RIE shrink

Indexed keywords

CHEMICAL SHRINK; CONTACT SHRINK; DOUBLE PATTERNING; IMMERSION LITHOGRAPHY; LELE; RIE SHRINK;

PHOTOLITHOGRAPHY; SHRINKAGE; SPIN DYNAMICS;

DATA STORAGE EQUIPMENT;

EID: 65849104359     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.814260     Document Type: Conference Paper

References (5)

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5. Shimura, S.; Iwao, F.; Kawasaki, T.; Dunn, S.; Tanaka, Y.; Yaegashi, H.; Yamada, Y. "Advanced resist process enabling implementation of CD controllability for 32nm and beyond" Proceedings of SPIE 2008, 6923, 69233C.