Crystallinity and surface roughness dependent photoluminescence of Y1 - xGdxVO4:Eu3+ thin films grown on Si (100) substrate

Thin Solid Films

Volumn 517, Issue 17, 2009, Pages 5137-5140

  Shim, Kyoo Sung ^a   Yang, Hyun Kyoung ^a   Moon, Byung Kee ^a   Choi, Byung Chun ^a   Jeong, Jung Hyun ^a   Bae, Jong Soung ^b   Kim, Kwang Ho ^c  

^a Pukyong National University   (South Korea)

^b Korea Basic Science Institute (KBSI)   (South Korea)

^c Pusan National University   (South Korea)

Author keywords

Pulsed laser deposition; Thin film phosphor; YGdVO4:Eu3+

Indexed keywords

CRYSTALLINE PHASE; CRYSTALLINITY; EMISSION INTENSITY; GRAIN SIZE; OPTIMIZED CONDITIONS; PHOTOLUMINESCENCE INTENSITIES; PL INTENSITY; PREFERRED ORIENTATIONS; SI (100) SUBSTRATE; THIN FILM PHOSPHOR; YGDVO4:EU3+;

EUROPIUM; GADOLINIUM; LATTICE MISMATCH; LIGHT EMISSION; METAL ANALYSIS; PHOSPHORS; PHOTOLUMINESCENCE; PULSED LASER DEPOSITION; SEMICONDUCTING SILICON COMPOUNDS; SILICON; SUBSTRATES; SURFACE PROPERTIES; SURFACE ROUGHNESS; THIN FILM DEVICES; THIN FILMS; YTTRIUM ALLOYS;

SURFACE MORPHOLOGY;

EID: 65649138766     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2009.03.005     Document Type: Article

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