Electrical properties and optical absorption in InN:In structures

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 5, Issue 6, 2008, Pages 1621-1623

  Komissarova, T A ^a   Plotnikov, D S ^b   Jmerik, V N ^b   Shubina, T V ^b   Mizerov, A M ^b   Semenov, A N ^b   Ivanov, S V ^b   Ryabova, L I ^a   Khokhlov, D R ^a  

^a MOSCOW STATE UNIVERSITY   (Russian Federation)

^b IOFFE INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRICAL PROPERTY; INN LAYERS; METALLIC INCLUSIONS; OPTICAL ABSORPTION; OPTICAL ABSORPTION MEASUREMENT; PLASMA-ASSISTED MOLECULAR BEAM EPITAXY;

ABSORPTION; CARRIER CONCENTRATION; CRYSTAL GROWTH; ELECTRIC PROPERTIES; INDIUM; LIGHT ABSORPTION; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; NITRIDES; OPTICAL PROPERTIES; STRUCTURE (COMPOSITION);

CARRIER MOBILITY;

EID: 65649109640     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.200778543     Document Type: Conference Paper

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