High mobility indium free amorphous oxide based thin film transistors

Proceedings of International Meeting on Information Display

Volumn 8, Issue , 2008, Pages 1199-1202

  Fortunato, E ^a   Pereira, L ^a   Barquinha, P ^a   Botelho Do Rego, A ^b   Gongalves, G ^a   Vila A ^c   Morante, J ^c   Martins R , ^a  

^a Center of Excellence in Microelectronics Optoelectronics and Processes   (Portugal)

^b UNIVERSITY OF LISBON   (Portugal)

^c UNIVERSITY OF BARCELONA   (Spain)

Author keywords

Oxide semiconductors; Rf magnetron sputtering; TFTs

Indexed keywords

ACTIVE MATRIXES; AMORPHOUS OXIDES; BACKPLANE; BOTTOM GATE THIN FILM TRANSISTORS; CHANNEL LAYERS; ELECTRICAL CHARACTERISTIC; ENHANCEMENT MODES; GATE SWING VOLTAGES; HIGH MOBILITY; INDIUM-FREE; OXIDE SEMICONDUCTORS; POST-ANNEALING TEMPERATURE; RF MAGNETRON SPUTTERING; RF-MAGNETRON CO-SPUTTERING; ROOM TEMPERATURE; SATURATION MOBILITY; SUBTHRESHOLD; TFTS; TIN-ZINC OXIDES; TURN ON VOLTAGE;

INDIUM; MAGNETRON SPUTTERING; MAGNETRONS; SEMICONDUCTING ZINC COMPOUNDS; THIN FILMS; TIN; ZINC; ZINC OXIDE;

THIN FILM TRANSISTORS;

EID: 65649108570     PISSN: 17387558     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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