Effects of morphology on the electronic properties of hydrogenated silicon carbide nanowires

Journal of Nano Research

Volumn 5, Issue 1, 2009, Pages 161-167

  Miranda, A ^a   Cuevas, J L ^a   Ramos, A E ^b   Cruz Irisson, M ^a  

^a INSTITUTO POLITÉCNICO NACIONAL   (Mexico)

^b UNIVERSIDAD NACIONAL AUTÓNOMA DE MÉXICO   (Mexico)

Author keywords

Electronic band structure; Nanowires; Silicon carbide; Tight binding

Indexed keywords

BAND GAPS; CUBIC SILICON CARBIDES; ELECTRONIC BAND STRUCTURE; ENERGY BAND GAPS; HYDROGEN ATOMS; HYDROGENATED SILICON CARBIDES; SEMI-EMPIRICAL; SIC NANOWIRES; SUPERCELL MODELS; THICKNESS VARIATIONS; TIGHT-BINDING; TIGHT-BINDING APPROACHES;

BINDING ENERGY; DANGLING BONDS; DENSITY FUNCTIONAL THEORY; ELECTRIC WIRE; ELECTRONIC DENSITY OF STATES; ELECTRONIC PROPERTIES; ENERGY GAP; HYDROGEN; HYDROGEN BONDS; HYDROGENATION; LOCAL DENSITY APPROXIMATION; MORPHOLOGY; NANOWIRES;

SILICON CARBIDE;

EID: 65649106952     PISSN: 16625250     EISSN: 16619897     Source Type: Journal    
DOI: 10.4028/www.scientific.net/JNanoR.5.161     Document Type: Article

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