Temperature dependence of time-resolved photoluminescence spectroscopy in InAs/GaAs quantum ring

Applied Physics Letters

Volumn 94, Issue 18, 2009, Pages

  Lin, C H ^a   Lin, H S ^a   Huang, C C ^a   Su, S K ^a   Lin, S D ^a   Sun, K W ^a   Lee, C P ^a   Liu, Y K ^b   Yang, M D ^b   Shen, J L ^b  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b CHUNG YUAN CHRISTIAN UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CONTINUOUS WAVES; DARK STATE; DECAY TIME; EXCITON LIFETIMES; HIGH TEMPERATURES; INAS; INAS/GAAS; INAS/GAAS QUANTUM RINGS; PL LIFETIMES; QUANTUM DOTS; QUANTUM RINGS; RATE-EQUATION MODELS; SELF-ASSEMBLED; TEMPERATURE DEPENDENCES; TIME-RESOLVED PHOTOLUMINESCENCE SPECTROSCOPIES;

GROUND STATE; NANORINGS; PHOTOLUMINESCENCE; SEMICONDUCTOR QUANTUM DOTS; SULFUR COMPOUNDS; TEMPERATURE DISTRIBUTION;

INDIUM ARSENIDE;

EID: 65549101028     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3130741     Document Type: Article

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