Epitaxial growth and characterization of MnAs on InP and In 0.53Ga0.47As

Journal of Physics D: Applied Physics

Volumn 42, Issue 9, 2009, Pages

  Basu, D ^a   Bhattacharya, P ^a   Guo, W ^a   Kum, H ^a  

^a UNIVERSITY OF MICHIGAN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COERCIVITY; HETERO-EPITAXIAL GROWTHS; IN PLANES; INP; LATTICE-MATCHED; MAGNETIZATION AND HYSTERESIS; MAGNETO-OPTIC KERR EFFECT MEASUREMENTS; MAGNETOCRYSTALLINE ANISOTROPY CONSTANTS; OUT-OF-PLANE DIRECTIONS; ROOM TEMPERATURES;

COERCIVE FORCE; CURIE TEMPERATURE; GALLIUM; HIGH ENERGY ELECTRON DIFFRACTION; KERR MAGNETOOPTICAL EFFECT; MAGNETIC FIELD EFFECTS; MANGANESE COMPOUNDS; MOLECULAR BEAMS; MOLECULAR DYNAMICS; SATURATION MAGNETIZATION; SINGLE CRYSTALS;

EPITAXIAL GROWTH;

EID: 65449182445     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/42/9/092001     Document Type: Article

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