Enhanced magnetoelectric properties in Pb(Zr,Ti)O3-CoFe 2O4 layered thin films with LaNiO3 as a buffer layer

Journal of Physics D: Applied Physics

Volumn 42, Issue 9, 2009, Pages

  He, H C ^a,b   Ma, J ^a   Lin, Y H ^a   Nan, C W ^a  

^a TSINGHUA UNIVERSITY   (China)

^b UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA   (China)

Author keywords

[No Author keywords available]

Indexed keywords

BOTTOM ELECTRODES; LAYERED FILMS; LAYERED THIN FILMS; MAGNETOELECTRIC PROPERTIES; MAGNETOELECTRIC RESPONSE; PB(ZR ,TI)O; PREFERENTIAL ORIENTATIONS; SIMILAR SOLUTIONS; SOLUTION METHODS;

BUFFER LAYERS; COMPOSITE MICROMECHANICS; FERROELECTRIC FILMS; LEAD; LEAD ALLOYS; THIN FILMS; ZIRCONIUM;

COMPOSITE FILMS;

EID: 65449151925     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/42/9/095008     Document Type: Article

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